Overview
The BUK9Y12-100E,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's extensive portfolio of power MOSFETs, known for their efficiency and reliability. The BUK9Y12-100E,115 is specifically designed for applications requiring low on-resistance and high current handling, making it suitable for various industrial, automotive, and consumer electronics.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | BUK9Y12-100E |
| Package | LFPAK56 (Power-SO8, SOT669) |
| Channel Type | N-Channel |
| VDS (Max) | 100 V |
| RDSon (Max) @ VGS = 10 V | 11.9 mΩ |
| RDSon (Max) @ VGS = 5 V | 12 mΩ |
| Tj (Max) | 175 °C |
| ID (Max) | 85 A |
| QGD (Typ) | 24 nC |
| Ptot (Max) | 238 W |
| Qr (Typ) | 90 nC |
| VGSth (Typ) | 1.7 V |
| Automotive Qualified | Yes, AEC-Q101 |
| Ciss (Typ) | 5980 pF |
| Coss (Typ) | 349 pF |
Key Features
- Low On-Resistance: The BUK9Y12-100E,115 features a low RDSon of 12 mΩ at VGS = 5 V, ensuring minimal power loss and high efficiency.
- High Current Handling: With a maximum continuous drain current (ID) of 85 A, this MOSFET is capable of handling high current applications.
- Automotive Qualified: This device is fully qualified to the AEC-Q101 standard, making it reliable for use in automotive applications.
- Thermal Performance: The LFPAK56 package provides excellent thermal performance, allowing for efficient heat dissipation.
- Logic Level Operation: The MOSFET can be driven with a logic level gate voltage, simplifying the design and reducing the complexity of the driving circuit.
Applications
- Automotive Systems: Suitable for various automotive applications, including powertrain, battery management, and electrical vehicle systems.
- Industrial Power Systems: Used in industrial power supplies, motor drives, and other high-power applications requiring efficiency and reliability.
- Consumer Electronics: Applicable in consumer electronics such as power adapters, battery chargers, and other high-current devices.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9Y12-100E,115?
The maximum drain-source voltage (VDS) is 100 V. - What is the typical on-resistance (RDSon) at VGS = 5 V?
The typical on-resistance (RDSon) at VGS = 5 V is 12 mΩ. - What is the maximum junction temperature (Tj) of this MOSFET?
The maximum junction temperature (Tj) is 175 °C. - Is the BUK9Y12-100E,115 automotive qualified?
Yes, it is fully qualified to the AEC-Q101 standard. - What is the package type of the BUK9Y12-100E,115?
The package type is LFPAK56 (Power-SO8, SOT669). - What is the maximum continuous drain current (ID) of this MOSFET?
The maximum continuous drain current (ID) is 85 A. - What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
The typical input capacitance (Ciss) is 5980 pF, and the typical output capacitance (Coss) is 349 pF. - Can the BUK9Y12-100E,115 be used in high-power industrial applications?
Yes, it is suitable for high-power industrial applications due to its high current handling and low on-resistance. - Is the BUK9Y12-100E,115 available in surface mount packaging?
Yes, it is available in surface mount packaging. - What is the typical gate-source threshold voltage (VGSth) of this MOSFET?
The typical gate-source threshold voltage (VGSth) is 1.7 V.
