BUK9Y22-100E,115
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Nexperia USA Inc. BUK9Y22-100E,115

Manufacturer No:
BUK9Y22-100E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 49A LFPAK56
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BUK9Y22-100E,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's TrenchMOS™ series, known for its advanced technology and reliability. The MOSFET is packaged in the LFPAK56-5 (Power-SO8) package, which is designed to provide excellent thermal performance and a small footprint, making it ideal for a variety of applications where space and efficiency are critical.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 49 A
Maximum Power Dissipation (Pd) @ Tc 147 W
On-Resistance (Rds On) @ Id, Vgs 21.5 mΩ @ 15A, 10V
Threshold Voltage (Vgs(th)) @ Id 2.1V @ 1mA V
Maximum Gate Voltage (Vgs) ±10 V
Operating Temperature Range (TJ) -55°C ~ 175°C °C
Package Type LFPAK56-5 (Power-SO8)
Mounting Type Surface Mount

Key Features

  • High Current Capability: The BUK9Y22-100E,115 can handle a continuous drain current of 49A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With an Rds On of 21.5 mΩ @ 15A, 10V, this MOSFET minimizes power losses and enhances efficiency.
  • AEC-Q101 Qualified: This component is qualified to the AEC-Q101 standard, ensuring its reliability and performance in automotive and other demanding environments.
  • Advanced TrenchMOS™ Technology: Utilizes Nexperia's TrenchMOS™ technology for improved performance, lower Rds On, and better thermal characteristics.
  • Compact LFPAK56-5 Package: The Power-SO8 package offers a small footprint and excellent thermal performance, ideal for space-constrained designs.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification, including power management, motor control, and battery management systems.
  • Power Supplies: Ideal for use in high-power switching power supplies, DC-DC converters, and other power management circuits.
  • Industrial Control: Used in industrial control systems, motor drives, and other high-power applications requiring reliable and efficient switching.
  • Consumer Electronics: Can be used in high-power consumer electronics such as gaming consoles, high-end audio equipment, and other devices requiring efficient power management.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9Y22-100E,115?

    The maximum drain to source voltage (Vdss) is 100V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 49A.

  3. What is the on-resistance (Rds On) of the BUK9Y22-100E,115?

    The on-resistance (Rds On) is 21.5 mΩ @ 15A, 10V.

  4. What is the operating temperature range (TJ) for this component?

    The operating temperature range (TJ) is -55°C ~ 175°C.

  5. Is the BUK9Y22-100E,115 AEC-Q101 qualified?

    Yes, the BUK9Y22-100E,115 is AEC-Q101 qualified.

  6. What package type is used for the BUK9Y22-100E,115?

    The package type is LFPAK56-5 (Power-SO8).

  7. What is the maximum gate voltage (Vgs) for this MOSFET?

    The maximum gate voltage (Vgs) is ±10V.

  8. What is the threshold voltage (Vgs(th)) for the BUK9Y22-100E,115?

    The threshold voltage (Vgs(th)) is 2.1V @ 1mA.

  9. What are some common applications for the BUK9Y22-100E,115?

    Common applications include automotive systems, power supplies, industrial control systems, and high-power consumer electronics.

  10. What technology is used in the BUK9Y22-100E,115?

    The BUK9Y22-100E,115 uses Nexperia's advanced TrenchMOS™ technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:21.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:35.8 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:4640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK9Y22-100E,115 BUK9Y12-100E,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 49A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 21.5mOhm @ 15A, 10V 12mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35.8 nC @ 5 V 64 nC @ 5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 4640 pF @ 25 V 7973 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 147W (Tc) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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