IRF540NL
  • Share:

Infineon Technologies IRF540NL

Manufacturer No:
IRF540NL
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 100V 33A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NL is a single N-Channel Power MOSFET produced by Infineon Technologies, available in a through-hole TO-220AB package. This device is part of the IR MOSFET family, which utilizes advanced silicon processes to offer high performance and reliability. The IRF540NL is known for its ultra-low on-resistance, fast switching speed, and ruggedized device design, making it suitable for a wide range of applications.

Key Specifications

Parameter Min. Typ. Max. Units Conditions
VDS (Drain-to-Source Voltage) - - 100 V VGS = 0V, ID = 250µA
RDS(on) (Drain-Source On-Resistance) - 0.077 - Ω VGS = 10V, ID = 17A
ID (Continuous Drain Current) - 33 - A TC = 25°C, VGS = 10V
ID (Continuous Drain Current at TC = 100°C) - 23 - A VGS = 10V
IDM (Pulsed Drain Current) - - 110 A -
PD (Power Dissipation) - - 130 W TC = 25°C
VGS(th) (Gate-Source Threshold Voltage) 2.0 - 4.0 V VDS = VGS, ID = 250µA
TJ (Operating Junction Temperature) -55 - 175 °C -

Key Features

  • Advanced Process Technology: Utilizes advanced silicon processes to achieve extremely low on-resistance and fast switching speeds.
  • Ultra Low On-Resistance: RDS(on) of 0.077 Ω at VGS = 10V and ID = 17A.
  • High Current Capability: Continuous drain current of 33A at TC = 25°C and 23A at TC = 100°C.
  • Fast Switching: Optimized for fast switching applications with low turn-on and turn-off times.
  • Ruggedized Device Design: Fully avalanche rated and capable of withstanding high dv/dt ratings.
  • Industry Standard Package: Available in TO-220AB through-hole package for ease of design and compatibility.
  • Wide SOA (Safe Operating Area): Planar cell structure ensures a wide SOA, enhancing the device's reliability.

Applications

  • DC Motors: Suitable for motor control applications due to its high current capability and fast switching.
  • Inverters and SMPS (Switch-Mode Power Supplies): Ideal for use in power conversion systems requiring high efficiency and reliability.
  • Lighting Systems: Can be used in lighting applications such as LED drivers and other power management circuits.
  • Load Switches: Effective in load switching applications where high current and low on-resistance are critical.
  • Battery Powered Applications: Suitable for battery-powered devices requiring efficient power management.

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the IRF540NL?

    The maximum drain-to-source voltage (VDS) is 100V.

  2. What is the typical on-resistance (RDS(on)) of the IRF540NL?

    The typical on-resistance (RDS(on)) is 0.077 Ω at VGS = 10V and ID = 17A.

  3. What is the continuous drain current (ID) of the IRF540NL at TC = 25°C?

    The continuous drain current (ID) is 33A at TC = 25°C.

  4. What is the operating junction temperature range of the IRF540NL?

    The operating junction temperature range is -55°C to +175°C.

  5. Is the IRF540NL fully avalanche rated?

    Yes, the IRF540NL is fully avalanche rated.

  6. What type of package is the IRF540NL available in?

    The IRF540NL is available in a TO-220AB through-hole package.

  7. What are some common applications of the IRF540NL?

    Common applications include DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.

  8. What is the maximum pulsed drain current (IDM) of the IRF540NL?

    The maximum pulsed drain current (IDM) is 110A).

  9. What is the gate-source threshold voltage (VGS(th)) of the IRF540NL?

    The gate-source threshold voltage (VGS(th)) is between 2.0V and 4.0V).

  10. Is the IRF540NL lead-free and halogen-free?

    Yes, the IRF540NL is available in lead-free and halogen-free versions).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
415

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF540NL IRF540ZL IRF520NL IRF530NL IRF540L
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 130W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-262 TO-262 TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BC857BE6327
BC857BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCP 69-16 E6327
BCP 69-16 E6327
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
IRFP064NPBF
IRFP064NPBF
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
IRFR024NTRPBF
IRFR024NTRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
BSS123IXTMA1
BSS123IXTMA1
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
IRF540NSTRRPBF
IRF540NSTRRPBF
Infineon Technologies
MOSFET N-CH 100V 33A D2PAK
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
TLE6250GXUMA1
TLE6250GXUMA1
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
AUIPS7091GTR
AUIPS7091GTR
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
CY7C68013A-100AXC
CY7C68013A-100AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 100LQFP