IRF540NL
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Infineon Technologies IRF540NL

Manufacturer No:
IRF540NL
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 100V 33A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF540NL is a single N-Channel Power MOSFET produced by Infineon Technologies, available in a through-hole TO-220AB package. This device is part of the IR MOSFET family, which utilizes advanced silicon processes to offer high performance and reliability. The IRF540NL is known for its ultra-low on-resistance, fast switching speed, and ruggedized device design, making it suitable for a wide range of applications.

Key Specifications

Parameter Min. Typ. Max. Units Conditions
VDS (Drain-to-Source Voltage) - - 100 V VGS = 0V, ID = 250µA
RDS(on) (Drain-Source On-Resistance) - 0.077 - Ω VGS = 10V, ID = 17A
ID (Continuous Drain Current) - 33 - A TC = 25°C, VGS = 10V
ID (Continuous Drain Current at TC = 100°C) - 23 - A VGS = 10V
IDM (Pulsed Drain Current) - - 110 A -
PD (Power Dissipation) - - 130 W TC = 25°C
VGS(th) (Gate-Source Threshold Voltage) 2.0 - 4.0 V VDS = VGS, ID = 250µA
TJ (Operating Junction Temperature) -55 - 175 °C -

Key Features

  • Advanced Process Technology: Utilizes advanced silicon processes to achieve extremely low on-resistance and fast switching speeds.
  • Ultra Low On-Resistance: RDS(on) of 0.077 Ω at VGS = 10V and ID = 17A.
  • High Current Capability: Continuous drain current of 33A at TC = 25°C and 23A at TC = 100°C.
  • Fast Switching: Optimized for fast switching applications with low turn-on and turn-off times.
  • Ruggedized Device Design: Fully avalanche rated and capable of withstanding high dv/dt ratings.
  • Industry Standard Package: Available in TO-220AB through-hole package for ease of design and compatibility.
  • Wide SOA (Safe Operating Area): Planar cell structure ensures a wide SOA, enhancing the device's reliability.

Applications

  • DC Motors: Suitable for motor control applications due to its high current capability and fast switching.
  • Inverters and SMPS (Switch-Mode Power Supplies): Ideal for use in power conversion systems requiring high efficiency and reliability.
  • Lighting Systems: Can be used in lighting applications such as LED drivers and other power management circuits.
  • Load Switches: Effective in load switching applications where high current and low on-resistance are critical.
  • Battery Powered Applications: Suitable for battery-powered devices requiring efficient power management.

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the IRF540NL?

    The maximum drain-to-source voltage (VDS) is 100V.

  2. What is the typical on-resistance (RDS(on)) of the IRF540NL?

    The typical on-resistance (RDS(on)) is 0.077 Ω at VGS = 10V and ID = 17A.

  3. What is the continuous drain current (ID) of the IRF540NL at TC = 25°C?

    The continuous drain current (ID) is 33A at TC = 25°C.

  4. What is the operating junction temperature range of the IRF540NL?

    The operating junction temperature range is -55°C to +175°C.

  5. Is the IRF540NL fully avalanche rated?

    Yes, the IRF540NL is fully avalanche rated.

  6. What type of package is the IRF540NL available in?

    The IRF540NL is available in a TO-220AB through-hole package.

  7. What are some common applications of the IRF540NL?

    Common applications include DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.

  8. What is the maximum pulsed drain current (IDM) of the IRF540NL?

    The maximum pulsed drain current (IDM) is 110A).

  9. What is the gate-source threshold voltage (VGS(th)) of the IRF540NL?

    The gate-source threshold voltage (VGS(th)) is between 2.0V and 4.0V).

  10. Is the IRF540NL lead-free and halogen-free?

    Yes, the IRF540NL is available in lead-free and halogen-free versions).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRF540NL IRF540ZL IRF520NL IRF530NL IRF540L
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 36A (Tc) 9.7A (Tc) 17A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 26.5mOhm @ 22A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 63 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1770 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 130W (Tc) 92W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 70W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-262 TO-262 TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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