IRF3205PBF
  • Share:

Infineon Technologies IRF3205PBF

Manufacturer No:
IRF3205PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 55V 110A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF3205PBF is an Advanced HEXFET® Power MOSFET from Infineon Technologies, formerly part of International Rectifier. This device utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, making it highly efficient and reliable. The MOSFET is packaged in a TO-220AB enclosure, which is widely accepted in the industry due to its low thermal resistance and cost-effectiveness. The IRF3205PBF is lead-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Value Unit
Fet Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 55 V
Drain-Source On Resistance-Max (RDS(on)) 8 mΩ
Rated Power Dissipation 200 W
Gate Charge (Qg) 146 nC
Gate-Source Voltage-Max (Vgss) 20 V
Drain Current (Id) 110 A
Turn-on Delay Time 14 ns
Turn-off Delay Time 50 ns
Rise Time 101 ns
Fall Time 65 ns
Operating Temperature Range -55°C to +175°C
Gate Source Threshold 4 V
Package TO-220AB

Key Features

  • Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • Ultra Low On-Resistance: With a maximum drain-source on-resistance of 8 mΩ at VGS = 10V.
  • Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage conditions.
  • Fast Switching: Features fast switching times, including a rise time of 101 ns and a fall time of 65 ns.
  • Fully Avalanche Rated: Capable of withstanding repetitive avalanche events.
  • Lead-Free and RoHS Compliant: Ensures environmental sustainability.
  • High Operating Temperature: Can operate up to 175°C, making it suitable for high-temperature applications.

Applications

The IRF3205PBF is designed for high current, high speed switching applications. It is particularly suited for:

  • Switch-Mode Power Supplies: Due to its fast switching speed and low on-resistance.
  • Automotive Systems: For applications requiring high reliability and efficiency.
  • DC/DC Converters: Ideal for high efficiency power management in portable and battery-operated products.
  • High Efficiency Power Management: In various industrial and commercial applications.

Q & A

  1. What is the maximum drain-source voltage (Vdss) of the IRF3205PBF?

    The maximum drain-source voltage (Vdss) is 55 V.

  2. What is the maximum drain current (Id) of the IRF3205PBF?

    The maximum drain current (Id) is 110 A.

  3. What is the maximum on-resistance (RDS(on)) of the IRF3205PBF?

    The maximum on-resistance (RDS(on)) is 8 mΩ at VGS = 10V.

  4. What is the operating temperature range of the IRF3205PBF?

    The operating temperature range is -55°C to +175°C.

  5. Is the IRF3205PBF lead-free and RoHS compliant?

    Yes, the IRF3205PBF is lead-free and RoHS compliant.

  6. What package type is the IRF3205PBF available in?

    The IRF3205PBF is available in a TO-220AB package.

  7. What are some typical applications of the IRF3205PBF?

    Typical applications include switch-mode power supplies, automotive systems, DC/DC converters, and high efficiency power management in various industrial and commercial applications.

  8. What is the gate charge (Qg) of the IRF3205PBF?

    The gate charge (Qg) is 146 nC.

  9. Does the IRF3205PBF support fast switching?

    Yes, the IRF3205PBF features fast switching with a rise time of 101 ns and a fall time of 65 ns.

  10. Is the IRF3205PBF fully avalanche rated?

    Yes, the IRF3205PBF is fully avalanche rated, allowing it to withstand repetitive avalanche events.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:146 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3247 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.77
429

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF3205PBF IRF3205ZPBF IRF3305PBF IRF3205SPBF IRF3205LPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Discontinued at Digi-Key Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 75A (Tc) 75A (Tc) 110A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V 6.5mOhm @ 66A, 10V 8mOhm @ 75A, 10V 8mOhm @ 62A, 10V 8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V 110 nC @ 10 V 150 nC @ 10 V 146 nC @ 10 V 146 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3247 pF @ 25 V 3450 pF @ 25 V 3650 pF @ 25 V 3247 pF @ 25 V 3247 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 200W (Tc) 170W (Tc) 330W (Tc) 200W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BC847SH6359XTMA1
BC847SH6359XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC847CE6327HTSA1
BC847CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC860BWH6327XTSA1
BC860BWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCX5410E6327
BCX5410E6327
Infineon Technologies
TRANS NPN 45V 1A SOT89
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BCP 69-16 E6327
BCP 69-16 E6327
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
TLE7368EXUMA5
TLE7368EXUMA5
Infineon Technologies
OPTIREG PMIC
CY7C68013A-128AXC
CY7C68013A-128AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 128LQFP