Overview
The IRF3205PBF is an Advanced HEXFET® Power MOSFET from Infineon Technologies, formerly part of International Rectifier. This device utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, making it highly efficient and reliable. The MOSFET is packaged in a TO-220AB enclosure, which is widely accepted in the industry due to its low thermal resistance and cost-effectiveness. The IRF3205PBF is lead-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Fet Type | N-Channel | |
No of Channels | 1 | |
Drain-to-Source Voltage (Vdss) | 55 | V |
Drain-Source On Resistance-Max (RDS(on)) | 8 | mΩ |
Rated Power Dissipation | 200 | W |
Gate Charge (Qg) | 146 | nC |
Gate-Source Voltage-Max (Vgss) | 20 | V |
Drain Current (Id) | 110 | A |
Turn-on Delay Time | 14 | ns |
Turn-off Delay Time | 50 | ns |
Rise Time | 101 | ns |
Fall Time | 65 | ns |
Operating Temperature Range | -55°C to +175°C | |
Gate Source Threshold | 4 | V |
Package | TO-220AB |
Key Features
- Advanced Process Technology: Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
- Ultra Low On-Resistance: With a maximum drain-source on-resistance of 8 mΩ at VGS = 10V.
- Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage conditions.
- Fast Switching: Features fast switching times, including a rise time of 101 ns and a fall time of 65 ns.
- Fully Avalanche Rated: Capable of withstanding repetitive avalanche events.
- Lead-Free and RoHS Compliant: Ensures environmental sustainability.
- High Operating Temperature: Can operate up to 175°C, making it suitable for high-temperature applications.
Applications
The IRF3205PBF is designed for high current, high speed switching applications. It is particularly suited for:
- Switch-Mode Power Supplies: Due to its fast switching speed and low on-resistance.
- Automotive Systems: For applications requiring high reliability and efficiency.
- DC/DC Converters: Ideal for high efficiency power management in portable and battery-operated products.
- High Efficiency Power Management: In various industrial and commercial applications.
Q & A
- What is the maximum drain-source voltage (Vdss) of the IRF3205PBF?
The maximum drain-source voltage (Vdss) is 55 V.
- What is the maximum drain current (Id) of the IRF3205PBF?
The maximum drain current (Id) is 110 A.
- What is the maximum on-resistance (RDS(on)) of the IRF3205PBF?
The maximum on-resistance (RDS(on)) is 8 mΩ at VGS = 10V.
- What is the operating temperature range of the IRF3205PBF?
The operating temperature range is -55°C to +175°C.
- Is the IRF3205PBF lead-free and RoHS compliant?
Yes, the IRF3205PBF is lead-free and RoHS compliant.
- What package type is the IRF3205PBF available in?
The IRF3205PBF is available in a TO-220AB package.
- What are some typical applications of the IRF3205PBF?
Typical applications include switch-mode power supplies, automotive systems, DC/DC converters, and high efficiency power management in various industrial and commercial applications.
- What is the gate charge (Qg) of the IRF3205PBF?
The gate charge (Qg) is 146 nC.
- Does the IRF3205PBF support fast switching?
Yes, the IRF3205PBF features fast switching with a rise time of 101 ns and a fall time of 65 ns.
- Is the IRF3205PBF fully avalanche rated?
Yes, the IRF3205PBF is fully avalanche rated, allowing it to withstand repetitive avalanche events.