BSS138IXTSA1
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Infineon Technologies BSS138IXTSA1

Manufacturer No:
BSS138IXTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL MOSFETS PG-SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138IXTSA1 is an N-channel enhancement mode small signal transistor produced by Infineon Technologies. It is designed for industrial and consumer applications and comes in a compact SOT-23-3 package. This MOSFET is part of Infineon's small signal and small power MOSFET portfolio, known for its optimal price/performance ratio and small footprint, making it suitable for a wide range of applications and circuits.

Key Specifications

Parameter Value
FET Type N-Channel MOSFET
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (Rds(on),max) 3.5 Ω @ 220mA, 10V
Continuous Drain Current (Id) @ 25°C 220 mA
Gate-Threshold Voltage (Vgs(th)) 1.5 V @ 1mA
Gate Charge (Qg) @ Vgs 2.4 nC @ 10V
Input Capacitance (Ciss) @ Vds 27 pF @ 25V
Maximum Power Dissipation 360 mW
Operating Temperature -55°C to 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-3, TO-236-3, SC-59

Key Features

  • Small outline packages (SOT-23-3)
  • Normal level and logic level gate drive availability
  • Enhancement mode operation
  • RoHS compliant and halogen-free
  • Fast switching and avalanche rated
  • Qualified according to JEDEC standards for industrial applications

Applications

  • Battery management and protection
  • Industrial drives
  • LED backlighting
  • Load switches
  • Reverse polarity protection
  • DC-DC converters

Q & A

  1. What is the BSS138IXTSA1 MOSFET?

    The BSS138IXTSA1 is an N-channel enhancement mode small signal transistor designed for industrial and consumer applications.

  2. What is the maximum drain-to-source voltage of the BSS138IXTSA1?

    The maximum drain-to-source voltage (Vdss) is 60 V.

  3. What is the maximum drain-source on resistance of the BSS138IXTSA1?

    The maximum drain-source on resistance (Rds(on),max) is 3.5 Ω @ 220mA, 10V.

  4. What is the continuous drain current of the BSS138IXTSA1 at 25°C?

    The continuous drain current (Id) @ 25°C is 220 mA.

  5. What is the gate-threshold voltage of the BSS138IXTSA1?

    The gate-threshold voltage (Vgs(th)) is 1.5 V @ 1mA.

  6. Is the BSS138IXTSA1 RoHS compliant?
  7. What are the typical applications of the BSS138IXTSA1?

    Typical applications include battery management and protection, industrial drives, LED backlighting, load switches, reverse polarity protection, and DC-DC converters.

  8. What is the operating temperature range of the BSS138IXTSA1?

    The operating temperature range is -55°C to 150°C (TJ).

  9. What package types are available for the BSS138IXTSA1?

    The BSS138IXTSA1 is available in SOT-23-3, TO-236-3, and SC-59 packages.

  10. Is the BSS138IXTSA1 qualified according to industry standards?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:32 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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