BSC028N06NSATMA1
  • Share:

Infineon Technologies BSC028N06NSATMA1

Manufacturer No:
BSC028N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 23A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC028N06NSATMA1, produced by Infineon Technologies, is a high-performance OptiMOS™ 5 N-channel power MOSFET. This device is specifically optimized for synchronous rectification in switched mode power supplies (SMPS), making it an ideal choice for various industrial and consumer applications. It is designed to operate at high temperatures up to 175°C and features a low on-resistance (RDS(on)) of 2.8 mΩ, which enhances system efficiency and reduces the need for paralleling multiple devices.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-Resistance) 2.8
ID (Continuous Drain Current) 137 A
ID,pulsed (Pulsed Drain Current) 548 A
Qg (Gate Charge) 43 nC
Tj,max (Maximum Junction Temperature) 175 °C
Package PG-TDSON-8

Key Features

  • Optimized for synchronous rectification in SMPS applications.
  • 40% lower RDS(on) compared to alternative devices.
  • 40% improvement in Figure of Merit (FOM) over similar devices.
  • RoHS compliant and halogen-free according to IEC61249-2-21.
  • 100% avalanche tested and rated for high performance.
  • Superior thermal resistance and MSL1 rated.

Applications

  • Synchronous rectification in switched mode power supplies (SMPS).
  • Solar micro inverters.
  • Isolated DC-DC converters.
  • Motor control for 12-48V systems.
  • Or-ing switches.

Q & A

  1. What is the maximum drain-source voltage of the BSC028N06NSATMA1?

    The maximum drain-source voltage is 60 V.

  2. What is the on-resistance (RDS(on)) of this MOSFET?

    The on-resistance is 2.8 mΩ.

  3. What is the continuous drain current rating of the BSC028N06NSATMA1?

    The continuous drain current is 137 A at 25°C.

  4. Is the BSC028N06NSATMA1 RoHS compliant?
  5. What are the typical applications of the BSC028N06NSATMA1?

    Typical applications include synchronous rectification in SMPS, solar micro inverters, isolated DC-DC converters, and motor control.

  6. What is the maximum junction temperature of this MOSFET?

    The maximum junction temperature is 175°C.

  7. What package type is used for the BSC028N06NSATMA1?

    The package type is PG-TDSON-8.

  8. Does the BSC028N06NSATMA1 have any special thermal features?
  9. Is the BSC028N06NSATMA1 100% avalanche tested?
  10. What is the benefit of the lower RDS(on) in this MOSFET?

    The lower RDS(on) results in higher system efficiency and reduced need for paralleling multiple devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.09
85

Please send RFQ , we will respond immediately.

Same Series
ATS-03B-113-C3-R0
ATS-03B-113-C3-R0
HEATSINK 40X40X10MM XCUT T412

Similar Products

Part Number BSC028N06NSATMA1 BSC028N06NSTATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc) 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 50µA 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 49 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V 3375 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 83W (Tc) 3W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS16UE6327HTSA1
BAS16UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC74-6
BAW56SE6327BTSA1
BAW56SE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BC817K25E6327HTSA1
BC817K25E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC817SUE6327HTSA1
BC817SUE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SC74-6
BCX56H6327XTSA1
BCX56H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BCX5610H6327XTSA1
BCX5610H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
TLE9879QXA40XUMA1
TLE9879QXA40XUMA1
Infineon Technologies
IC MOTOR DRIVER 48VQFN
TLE7368EXUMA3
TLE7368EXUMA3
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36