BSC028N06NSTATMA1
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Infineon Technologies BSC028N06NSTATMA1

Manufacturer No:
BSC028N06NSTATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 24A/100A TDSON
Delivery:
Payment:
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Product Introduction

Overview

The BSC028N06NSTATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, part of the OptiMOS™ 5 60V family. This device is optimized for synchronous rectification in switched mode power supplies (SMPS), making it ideal for applications in servers, desktops, and tablet chargers. It is also suitable for a broad range of industrial applications, including motor control, solar micro inverters, and fast switching DC-DC converters.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
On-Resistance (Rds(on))2.8 mΩ @ 10 V, 50 A
Current Rating (Id)24 A (Ta), 100 A (Tc)
Power Dissipation (Pd)3 W (Ta), 100 W (Tc)
Package TypePG-TDSON-8-7
ComplianceRoHS compliant - halogen free, MSL1 rated

Key Features

  • Optimized for synchronous rectification
  • 40% lower Rds(on) than alternative devices
  • 40% improvement of Figure of Merit (FOM) over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Applications

  • Synchronous rectification in SMPS
  • Solar micro inverters
  • Isolated DC-DC converters
  • Motor control for 12-48V systems
  • Or-ing switches

Q & A

  1. What is the voltage rating of the BSC028N06NSTATMA1 MOSFET? The voltage rating is 60 V.
  2. What is the on-resistance (Rds(on)) of this MOSFET? The on-resistance is 2.8 mΩ @ 10 V, 50 A.
  3. What are the current ratings for this device? The current ratings are 24 A (Ta) and 100 A (Tc).
  4. What is the power dissipation capacity of this MOSFET? The power dissipation is 3 W (Ta) and 100 W (Tc).
  5. Is the BSC028N06NSTATMA1 RoHS compliant? Yes, it is RoHS compliant and halogen free.
  6. What package type does this MOSFET use? It uses the PG-TDSON-8-7 package type.
  7. What are the primary applications of this MOSFET? Primary applications include synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and or-ing switches.
  8. How does this MOSFET improve system efficiency? It offers 40% lower Rds(on) and 40% improvement in FOM over similar devices, leading to higher system efficiency and lower voltage overshoot.
  9. What are the benefits of using this MOSFET? Benefits include highest system efficiency, less paralleling required, increased power density, system cost reduction, and very low voltage overshoot.
  10. Is this MOSFET suitable for industrial applications? Yes, it is suitable for a broad range of industrial applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3375 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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In Stock

$3.05
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Similar Products

Part Number BSC028N06NSTATMA1 BSC028N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 50µA 2.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3375 pF @ 30 V 2700 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 100W (Tc) 2.5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN

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