BSC028N06NSTATMA1
  • Share:

Infineon Technologies BSC028N06NSTATMA1

Manufacturer No:
BSC028N06NSTATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 24A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC028N06NSTATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, part of the OptiMOS™ 5 60V family. This device is optimized for synchronous rectification in switched mode power supplies (SMPS), making it ideal for applications in servers, desktops, and tablet chargers. It is also suitable for a broad range of industrial applications, including motor control, solar micro inverters, and fast switching DC-DC converters.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
On-Resistance (Rds(on))2.8 mΩ @ 10 V, 50 A
Current Rating (Id)24 A (Ta), 100 A (Tc)
Power Dissipation (Pd)3 W (Ta), 100 W (Tc)
Package TypePG-TDSON-8-7
ComplianceRoHS compliant - halogen free, MSL1 rated

Key Features

  • Optimized for synchronous rectification
  • 40% lower Rds(on) than alternative devices
  • 40% improvement of Figure of Merit (FOM) over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Applications

  • Synchronous rectification in SMPS
  • Solar micro inverters
  • Isolated DC-DC converters
  • Motor control for 12-48V systems
  • Or-ing switches

Q & A

  1. What is the voltage rating of the BSC028N06NSTATMA1 MOSFET? The voltage rating is 60 V.
  2. What is the on-resistance (Rds(on)) of this MOSFET? The on-resistance is 2.8 mΩ @ 10 V, 50 A.
  3. What are the current ratings for this device? The current ratings are 24 A (Ta) and 100 A (Tc).
  4. What is the power dissipation capacity of this MOSFET? The power dissipation is 3 W (Ta) and 100 W (Tc).
  5. Is the BSC028N06NSTATMA1 RoHS compliant? Yes, it is RoHS compliant and halogen free.
  6. What package type does this MOSFET use? It uses the PG-TDSON-8-7 package type.
  7. What are the primary applications of this MOSFET? Primary applications include synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and or-ing switches.
  8. How does this MOSFET improve system efficiency? It offers 40% lower Rds(on) and 40% improvement in FOM over similar devices, leading to higher system efficiency and lower voltage overshoot.
  9. What are the benefits of using this MOSFET? Benefits include highest system efficiency, less paralleling required, increased power density, system cost reduction, and very low voltage overshoot.
  10. Is this MOSFET suitable for industrial applications? Yes, it is suitable for a broad range of industrial applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3375 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.05
297

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC028N06NSTATMA1 BSC028N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 50µA 2.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3375 pF @ 30 V 2700 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 100W (Tc) 2.5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS16E6393HTSA1
BAS16E6393HTSA1
Infineon Technologies
DIODE GP 80V 250MA SOT23-3
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC817-40E6433
BC817-40E6433
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
SAK-TC1796-256F150EBC
SAK-TC1796-256F150EBC
Infineon Technologies
32-BIT RISC FLASH MCU
BSP78E6327
BSP78E6327
Infineon Technologies
POWER SWITCH SMART LOW
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP