Overview
The CSD19536KCS is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this component is part of the NexFET™ Power MOSFET series, known for its low on-resistance and high efficiency. The CSD19536KCS is ideal for applications requiring high current handling and fast switching capabilities. Its market positioning targets industries such as automotive, industrial automation, and consumer electronics, where reliability and performance are critical. The unique selling points of this MOSFET include its ultra-low RDS(on), compact packaging, and robust thermal performance, making it a competitive choice for modern power designs.
Key Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V | Maximum |
| Continuous Drain Current (ID) | 195 | A | At TC = 25°C |
| Pulsed Drain Current (IDM) | 780 | A | Maximum |
| On-Resistance (RDS(on)) | 1.7 | mΩ | At VGS = 10V |
| Gate-Source Voltage (VGS) | ±20 | V | Maximum |
| Power Dissipation (PD) | 333 | W | At TC = 25°C |
| Operating Junction Temperature (TJ) | -55 to 175 | °C | Range |
| Package | TO-220 | - | 3-pin |
Key Features
- Ultra-low RDS(on) for reduced conduction losses.
- High current handling capability up to 195A.
- Fast switching performance for efficient power conversion.
- Robust thermal performance in a compact TO-220 package.
- Designed for high-reliability applications in harsh environments.
Applications
The CSD19536KCS is widely used in various industries due to its high efficiency and reliability. In automotive electronics, it is employed in motor control, battery management systems, and LED lighting. In industrial automation, it is utilized in power supplies, motor drives, and robotics. Additionally, it finds applications in consumer electronics, such as power adapters, inverters, and high-power audio amplifiers. Its ability to handle high currents and operate in a wide temperature range makes it suitable for demanding applications.
Q & A
1. What is the maximum drain-source voltage for the CSD19536KCS?
The maximum drain-source voltage (VDS) is 100V.
2. What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is 195A at a case temperature of 25°C.
3. What is the typical on-resistance (RDS(on)) of the CSD19536KCS?
The typical on-resistance is 1.7mΩ at a gate-source voltage of 10V.
4. What package does the CSD19536KCS come in?
It is available in a TO-220 3-pin package.
5. Can this MOSFET operate in high-temperature environments?
Yes, it has an operating junction temperature range of -55°C to 175°C.
6. What is the pulsed drain current capability of the CSD19536KCS?
The pulsed drain current (IDM) is 780A.
7. Is this MOSFET suitable for automotive applications?
Yes, it is designed for high-reliability applications, including automotive electronics.
8. What is the maximum gate-source voltage (VGS) for this MOSFET?
The maximum gate-source voltage is ±20V.
9. What are the key advantages of the CSD19536KCS?
Its key advantages include ultra-low RDS(on), high current handling, fast switching, and robust thermal performance.
10. Where can I find detailed specifications for the CSD19536KCS?
Detailed specifications can be found on the official Texas Instruments website or authorized distributors like Digi-Key, Mouser, and Arrow Electronics.
