CSD18536KCS
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Texas Instruments CSD18536KCS

Manufacturer No:
CSD18536KCS
Manufacturer:
Texas Instruments
Package:
Tube
Description:
MOSFET N-CH 60V 200A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The CSD18536KCS is a 60V N-Channel NexFET™ Power MOSFET manufactured by Texas Instruments. This device is designed for high-performance applications requiring low on-resistance and high current handling. The CSD18536KCS is packaged in a TO-220-3 package, making it suitable for a variety of power management and switching applications. With its robust electrical and thermal characteristics, this MOSFET is ideal for use in industrial, automotive, and consumer electronics.

Key Specifications

Parameter Min Typ Max Unit
Drain-to-Source Voltage (Vds) - - 60 V
Gate-to-Source Voltage (Vgs) - - ±20 V
Continuous Drain Current (Id) at 25°C - - 200 A
Pulsed Drain Current (Idm) - - 400 A
Power Dissipation (Pd) - - 375 W
Operating Junction and Storage Temperature Range -55 - 175 °C
Gate-to-Source Threshold Voltage (Vgs(th)) 1.4 1.8 2.2 V
Drain-to-Source On-Resistance (Rds(on)) at Vgs = 10V, Id = 100A 1.3 1.6 - mΩ
Input Capacitance (Ciss) 8790 11430 - pF
Gate Charge (Qg) at Vgs = 10V 108 140 - nC

Key Features

  • Low On-Resistance: The CSD18536KCS features a low Rds(on) of 1.3 mΩ at Vgs = 10V and Id = 100A, making it highly efficient for power switching applications.
  • High Current Handling: With a continuous drain current of 200A and a pulsed drain current of 400A, this MOSFET is suitable for high-power applications.
  • Robust Thermal Performance: The device has a high power dissipation capability of 375W and operates over a wide temperature range from -55°C to 175°C.
  • Compact Packaging: The TO-220-3 package is compact and easy to integrate into various designs, offering good thermal dissipation characteristics.
  • Low Gate Charge: The total gate charge (Qg) is 108 nC at Vgs = 10V, which helps in reducing switching losses.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and voltage regulators due to its high efficiency and low on-resistance.
  • Automotive Systems: Used in automotive applications such as motor control, battery management, and power distribution due to its robust thermal and electrical characteristics.
  • Industrial Control: Ideal for industrial control systems, including motor drives, power inverters, and switching power supplies.
  • Consumer Electronics: Applicable in consumer electronics for power management in devices such as laptops, desktops, and other high-power electronic equipment.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18536KCS?

    The maximum drain-to-source voltage (Vds) is 60V.

  2. What is the continuous drain current rating of the CSD18536KCS at 25°C?

    The continuous drain current (Id) at 25°C is 200A.

  3. What is the typical on-resistance of the CSD18536KCS at Vgs = 10V and Id = 100A?

    The typical on-resistance (Rds(on)) at Vgs = 10V and Id = 100A is 1.6 mΩ.

  4. What is the operating temperature range of the CSD18536KCS?

    The operating junction and storage temperature range is from -55°C to 175°C.

  5. What is the gate-to-source threshold voltage of the CSD18536KCS?

    The gate-to-source threshold voltage (Vgs(th)) is between 1.4V and 2.2V.

  6. What is the maximum gate charge of the CSD18536KCS at Vgs = 10V?

    The maximum gate charge (Qg) at Vgs = 10V is 140 nC.

  7. What package type is the CSD18536KCS available in?

    The CSD18536KCS is available in a TO-220-3 package.

  8. Is the CSD18536KCS RoHS compliant?

    Yes, the CSD18536KCS is RoHS compliant.

  9. What are some common applications of the CSD18536KCS?

    Common applications include power management, automotive systems, industrial control, and consumer electronics.

  10. How can I obtain the datasheet for the CSD18536KCS?

    The datasheet can be downloaded from the official Texas Instruments website or other electronic component databases like Alldatasheet or Heisener.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:108 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11430 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number CSD18536KCS CSD19536KCS CSD18532KCS CSD18533KCS CSD18534KCS CSD18535KCS
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 150A (Ta) 100A (Tc) 72A (Ta), 100A (Tc) 45A (Ta), 100A (Tc) 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V 4.2mOhm @ 100A, 10V 6.3mOhm @ 75A, 10V 9.5mOhm @ 40A, 10V 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 3.2V @ 250µA 2.2V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V 153 nC @ 10 V 53 nC @ 10 V 34 nC @ 10 V 24 nC @ 10 V 81 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11430 pF @ 30 V 12000 pF @ 50 V 4680 pF @ 30 V 3025 pF @ 30 V 1880 pF @ 30 V 6620 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 250W (Tc) 192W (Tc) 107W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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