CSD19534KCS
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Texas Instruments CSD19534KCS

Manufacturer No:
CSD19534KCS
Manufacturer:
Texas Instruments
Package:
Tube
Description:
MOSFET N-CH 100V 100A TO220-3
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Product Introduction

Overview

The CSD19534KCS is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this MOSFET is part of Texas Instruments' NexFET™ product line, known for its efficiency and reliability. The CSD19534KCS is particularly suited for applications requiring low on-resistance and high switching speeds, making it ideal for use in DC-DC converters, motor drives, and load switches. Its compact package and robust performance make it a preferred choice for engineers in industrial, automotive, and consumer electronics sectors.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100VMaximum voltage
Continuous Drain Current (ID)120AAt 25°C
On-Resistance (RDS(on))1.7At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum
Power Dissipation (PD)214WAt 25°C
Operating Temperature Range-55 to +175°C
PackageTO-2203-pin

Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency in power applications.
  • High Current Handling: Supports up to 120A continuous drain current, suitable for high-power designs.
  • Fast Switching: Optimized for high-speed switching applications, reducing switching losses.
  • Robust Thermal Performance: Designed to operate reliably in a wide temperature range (-55°C to +175°C).
  • Compact TO-220 Package: Provides a balance of thermal performance and ease of assembly.

Applications

The CSD19534KCS is widely used in various power management applications, including:

  • DC-DC Converters: Enhances efficiency in step-up and step-down voltage conversion circuits.
  • Motor Drives: Provides reliable switching for controlling motors in industrial and automotive systems.
  • Load Switches: Ensures efficient power distribution in consumer electronics and battery-powered devices.
  • Power Supplies: Improves performance in AC-DC and DC-DC power supply designs.

Q & A

1. What is the maximum drain-source voltage of the CSD19534KCS?

The maximum drain-source voltage (VDS) is 100V.

2. What is the continuous drain current rating?

The CSD19534KCS can handle up to 120A of continuous drain current at 25°C.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 1.7mΩ at VGS = 10V.

4. What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

5. What package does the CSD19534KCS come in?

It is available in a TO-220 package.

6. Is this MOSFET suitable for high-speed switching applications?

Yes, the CSD19534KCS is optimized for fast switching, making it ideal for high-speed applications.

7. Can this MOSFET be used in automotive applications?

Yes, its robust thermal performance and high current handling make it suitable for automotive systems.

8. What is the maximum gate-source voltage?

The maximum gate-source voltage (VGS) is ±20V.

9. What is the power dissipation rating?

The power dissipation (PD) is 214W at 25°C.

10. What are the key advantages of using the CSD19534KCS in power supplies?

Its low on-resistance and high current handling improve efficiency and reliability in power supply designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):118W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number CSD19534KCS CSD19536KCS CSD19535KCS CSD18534KCS CSD19531KCS CSD19533KCS
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 60 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 150A (Ta) 150A (Ta) 45A (Ta), 100A (Tc) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 30A, 10V 2.7mOhm @ 100A, 10V 3.6mOhm @ 100A, 10V 9.5mOhm @ 40A, 10V 7.7mOhm @ 60A, 10V 10.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 2.3V @ 250µA 3.3V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2 nC @ 10 V 153 nC @ 10 V 101 nC @ 10 V 24 nC @ 10 V 38 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 50 V 12000 pF @ 50 V 7930 pF @ 50 V 1880 pF @ 30 V 3870 pF @ 50 V 2670 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 118W (Tc) 375W (Tc) 300W (Tc) 107W (Tc) 214W (Tc) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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