CSD19535KCS
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Texas Instruments CSD19535KCS

Manufacturer No:
CSD19535KCS
Manufacturer:
Texas Instruments
Package:
Bulk
Description:
MOSFET N-CH 100V 150A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The CSD19535KCS is a high-performance N-channel MOSFET produced by Texas Instruments, designed for power management applications. This component is part of the NexFET™ power MOSFET series, known for its efficiency and reliability in switching and power conversion tasks. It is particularly suited for use in automotive, industrial, and consumer electronics, offering a robust solution for high-current and high-voltage requirements.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100VMaximum voltage
Continuous Drain Current (ID)195AAt 25°C
RDS(on)3.5At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum voltage
Power Dissipation (PD)300WAt 25°C
Operating Temperature-55 to +175°CRange

Key Features

  • Low on-resistance for reduced power losses
  • High current handling capability
  • Optimized for high-frequency switching
  • Robust thermal performance
  • Designed for automotive-grade reliability

Applications

The CSD19535KCS is widely used in various applications, including:

  • Automotive systems such as electric power steering and motor control
  • Industrial power supplies and inverters
  • Consumer electronics like power adapters and battery management systems
  • Renewable energy systems including solar inverters and wind turbines

Q & A

1. What is the maximum drain-source voltage of the CSD19535KCS?

The maximum drain-source voltage is 100V.

2. What is the continuous drain current at 25°C?

The continuous drain current is 195A at 25°C.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 3.5mΩ at VGS = 10V.

4. What is the maximum gate-source voltage?

The maximum gate-source voltage is ±20V.

5. What is the power dissipation at 25°C?

The power dissipation is 300W at 25°C.

6. What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

7. Is this MOSFET suitable for automotive applications?

Yes, it is designed for automotive-grade reliability.

8. Can this MOSFET be used in high-frequency switching applications?

Yes, it is optimized for high-frequency switching.

9. What are the key features of the CSD19535KCS?

Key features include low on-resistance, high current handling, and robust thermal performance.

10. What are some typical applications of this MOSFET?

Typical applications include automotive systems, industrial power supplies, consumer electronics, and renewable energy systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:101 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7930 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number CSD19535KCS CSD19536KCS CSD18535KCS CSD19505KCS CSD19531KCS CSD19533KCS CSD19534KCS
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 80 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 150A (Ta) 150A (Ta) 200A (Ta) 150A (Ta) 100A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V 2mOhm @ 100A, 10V 3.8mOhm @ 100A, 6V 7.7mOhm @ 60A, 10V 10.5mOhm @ 55A, 10V 16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.2V @ 250µA 2.4V @ 250µA 3.2V @ 250µA 3.3V @ 250µA 3.4V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 101 nC @ 10 V 153 nC @ 10 V 81 nC @ 10 V 76 nC @ 10 V 38 nC @ 10 V 35 nC @ 10 V 22.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7930 pF @ 50 V 12000 pF @ 50 V 6620 pF @ 30 V 7820 pF @ 40 V 3870 pF @ 50 V 2670 pF @ 50 V 1670 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 300W (Tc) 375W (Tc) 300W (Tc) 300W (Tc) 214W (Tc) 188W (Tc) 118W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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