CSD19505KCS
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Texas Instruments CSD19505KCS

Manufacturer No:
CSD19505KCS
Manufacturer:
Texas Instruments
Package:
Bulk
Description:
MOSFET N-CH 80V 150A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The CSD19505KCS from Texas Instruments is a high-performance N-channel MOSFET designed for a variety of power management and switching applications. This device is part of TI's NexFET™ family, known for its high efficiency, low on-resistance, and robust thermal performance. The CSD19505KCS is particularly suited for use in DC-DC converters, power supplies, and other high-power electronic systems where reliability and efficiency are critical.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)55V
VGS (Gate-Source Voltage)±20V
RDS(ON) (On-Resistance)3.5
ID (Continuous Drain Current)150A
PD (Power Dissipation)250W
TJ (Junction Temperature)-55 to 150°C
PackageTO-263 (D2PAK)

Key Features

  • Low On-Resistance (RDS(ON)) for high efficiency
  • High Continuous Drain Current (ID) for robust performance
  • Wide Operating Junction Temperature Range (-55°C to 150°C)
  • High Power Dissipation Capability
  • TO-263 (D2PAK) package for easy mounting and thermal management
  • Compliant with RoHS and Pb-free standards

Applications

  • DC-DC Converters and Power Supplies
  • Motor Control and Drives
  • Power Management in High-Performance Computing Systems
  • Automotive Systems (e.g., battery management, power steering)
  • Industrial Power Systems (e.g., power inverters, UPS systems)

Q & A

  1. What is the maximum drain-source voltage of the CSD19505KCS?
    The maximum drain-source voltage (VDS) of the CSD19505KCS is 55 V.
  2. What is the typical on-resistance of the CSD19505KCS?
    The typical on-resistance (RDS(ON)) of the CSD19505KCS is 3.5 mΩ.
  3. What is the continuous drain current rating of the CSD19505KCS?
    The continuous drain current (ID) rating of the CSD19505KCS is 150 A.
  4. What is the operating junction temperature range of the CSD19505KCS?
    The operating junction temperature range of the CSD19505KCS is -55°C to 150°C.
  5. What package type is the CSD19505KCS available in?
    The CSD19505KCS is available in the TO-263 (D2PAK) package.
  6. Is the CSD19505KCS RoHS compliant?
    Yes, the CSD19505KCS is RoHS and Pb-free compliant.
  7. What are some common applications for the CSD19505KCS?
    The CSD19505KCS is commonly used in DC-DC converters, power supplies, motor control, automotive systems, and industrial power systems.
  8. How does the CSD19505KCS contribute to system efficiency?
    The CSD19505KCS contributes to system efficiency through its low on-resistance and high continuous drain current, which minimize power losses and enhance overall system performance.
  9. What are the benefits of using the TO-263 package for the CSD19505KCS?
    The TO-263 package provides good thermal management and ease of mounting, making it suitable for high-power applications.
  10. Where can I find detailed specifications and datasheets for the CSD19505KCS?
    Detailed specifications and datasheets for the CSD19505KCS can be found on the Texas Instruments official website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:150A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 100A, 6V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7820 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number CSD19505KCS CSD19506KCS CSD19535KCS CSD19501KCS CSD19503KCS
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 100 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 150A (Ta) 100A (Ta) 150A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 100A, 6V 2.3mOhm @ 100A, 10V 3.6mOhm @ 100A, 10V 6.6mOhm @ 60A, 10V 9.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V 156 nC @ 10 V 101 nC @ 10 V 50 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7820 pF @ 40 V 12200 pF @ 40 V 7930 pF @ 50 V 3980 pF @ 40 V 2730 pF @ 40 V
FET Feature - - - - -
Power Dissipation (Max) 300W (Tc) 375W (Tc) 300W (Tc) 217W (Tc) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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