CSD19506KCS
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Texas Instruments CSD19506KCS

Manufacturer No:
CSD19506KCS
Manufacturer:
Texas Instruments
Package:
Tube
Description:
MOSFET N-CH 80V 100A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The CSD19506KCS is an 80V, N-channel NexFET™ power MOSFET manufactured by Texas Instruments. Designed for power conversion applications, this MOSFET is housed in a TO-220 package and is optimized to minimize losses, making it a competitive choice in the market. Its target user groups include engineers and designers working on secondary-side synchronous rectification and motor control applications.

Key Specifications

ParameterValueUnitNotes
VDS80VDrain-Source Voltage
RDS(on) max at VGS=10V2.3Drain-Source On-Resistance
IDM (pulsed drain current)400AMaximum Pulsed Drain Current
QG (typ)120nCTotal Gate Charge
QGD (typ)20nCGate-Drain Charge
QGS (typ)37nCGate-Source Charge
VGS20VGate-Source Voltage
VGS(th) (typ)2.5VGate Threshold Voltage
ID (silicon limited at Tc=25°C)273AContinuous Drain Current
ID (package limited)150APackage Limited Drain Current

Key Features

  • Ultra-low Qg and Qgd for reduced switching losses.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche rated for enhanced reliability in rugged conditions.
  • Lead-free pin plating and RoHS compliance for environmental safety.
  • Halogen-free TO-220 plastic package for improved sustainability.

Applications

The CSD19506KCS is widely used in secondary-side synchronous rectification and motor control applications. Its low on-resistance and high efficiency make it ideal for power conversion systems, including switch-mode power supplies (SMPS), DC-DC converters, and motor drives. Its robust design ensures reliable performance in industrial and automotive electronics.

Q & A

1. What is the maximum drain-source voltage of the CSD19506KCS?

The maximum drain-source voltage is 80V.

2. What is the typical gate charge (QG) of this MOSFET?

The typical gate charge is 120nC.

3. Is the CSD19506KCS suitable for motor control applications?

Yes, it is designed for motor control and secondary-side synchronous rectification.

4. Does this MOSFET support avalanche operation?

Yes, it is avalanche rated for enhanced reliability.

5. What is the package type of the CSD19506KCS?

It comes in a TO-220 plastic package.

6. Is the CSD19506KCS RoHS compliant?

Yes, it is RoHS compliant and has lead-free pin plating.

7. What is the typical gate threshold voltage (VGS(th))?

The typical gate threshold voltage is 2.5V.

8. Can this MOSFET handle high pulsed drain currents?

Yes, it can handle pulsed drain currents up to 400A.

9. What is the maximum continuous drain current (ID)?

The maximum continuous drain current is 273A at Tc=25°C.

10. Is the CSD19506KCS halogen-free?

Yes, it is halogen-free, making it environmentally friendly.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:156 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12200 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number CSD19506KCS CSD19536KCS CSD19501KCS CSD19503KCS CSD19505KCS
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 100 V 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 150A (Ta) 100A (Ta) 100A (Ta) 150A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V 6.6mOhm @ 60A, 10V 9.2mOhm @ 60A, 10V 3.8mOhm @ 100A, 6V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.2V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V 153 nC @ 10 V 50 nC @ 10 V 36 nC @ 10 V 76 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12200 pF @ 40 V 12000 pF @ 50 V 3980 pF @ 40 V 2730 pF @ 40 V 7820 pF @ 40 V
FET Feature - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 217W (Tc) 188W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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