CSD19506KCS
  • Share:

Texas Instruments CSD19506KCS

Manufacturer No:
CSD19506KCS
Manufacturer:
Texas Instruments
Package:
Tube
Description:
MOSFET N-CH 80V 100A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19506KCS is an 80V, N-channel NexFET™ power MOSFET manufactured by Texas Instruments. Designed for power conversion applications, this MOSFET is housed in a TO-220 package and is optimized to minimize losses, making it a competitive choice in the market. Its target user groups include engineers and designers working on secondary-side synchronous rectification and motor control applications.

Key Specifications

ParameterValueUnitNotes
VDS80VDrain-Source Voltage
RDS(on) max at VGS=10V2.3Drain-Source On-Resistance
IDM (pulsed drain current)400AMaximum Pulsed Drain Current
QG (typ)120nCTotal Gate Charge
QGD (typ)20nCGate-Drain Charge
QGS (typ)37nCGate-Source Charge
VGS20VGate-Source Voltage
VGS(th) (typ)2.5VGate Threshold Voltage
ID (silicon limited at Tc=25°C)273AContinuous Drain Current
ID (package limited)150APackage Limited Drain Current

Key Features

  • Ultra-low Qg and Qgd for reduced switching losses.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche rated for enhanced reliability in rugged conditions.
  • Lead-free pin plating and RoHS compliance for environmental safety.
  • Halogen-free TO-220 plastic package for improved sustainability.

Applications

The CSD19506KCS is widely used in secondary-side synchronous rectification and motor control applications. Its low on-resistance and high efficiency make it ideal for power conversion systems, including switch-mode power supplies (SMPS), DC-DC converters, and motor drives. Its robust design ensures reliable performance in industrial and automotive electronics.

Q & A

1. What is the maximum drain-source voltage of the CSD19506KCS?

The maximum drain-source voltage is 80V.

2. What is the typical gate charge (QG) of this MOSFET?

The typical gate charge is 120nC.

3. Is the CSD19506KCS suitable for motor control applications?

Yes, it is designed for motor control and secondary-side synchronous rectification.

4. Does this MOSFET support avalanche operation?

Yes, it is avalanche rated for enhanced reliability.

5. What is the package type of the CSD19506KCS?

It comes in a TO-220 plastic package.

6. Is the CSD19506KCS RoHS compliant?

Yes, it is RoHS compliant and has lead-free pin plating.

7. What is the typical gate threshold voltage (VGS(th))?

The typical gate threshold voltage is 2.5V.

8. Can this MOSFET handle high pulsed drain currents?

Yes, it can handle pulsed drain currents up to 400A.

9. What is the maximum continuous drain current (ID)?

The maximum continuous drain current is 273A at Tc=25°C.

10. Is the CSD19506KCS halogen-free?

Yes, it is halogen-free, making it environmentally friendly.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:156 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12200 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$5.32
93

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD19506KCS CSD19536KCS CSD19501KCS CSD19503KCS CSD19505KCS
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 100 V 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 150A (Ta) 100A (Ta) 100A (Ta) 150A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V 6.6mOhm @ 60A, 10V 9.2mOhm @ 60A, 10V 3.8mOhm @ 100A, 6V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.2V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V 153 nC @ 10 V 50 nC @ 10 V 36 nC @ 10 V 76 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12200 pF @ 40 V 12000 pF @ 50 V 3980 pF @ 40 V 2730 pF @ 40 V 7820 pF @ 40 V
FET Feature - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 217W (Tc) 188W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

PCM1791ADBR
PCM1791ADBR
Texas Instruments
IC DAC/AUDIO 24BIT 200K 28SSOP
ADC12J4000NKE10
ADC12J4000NKE10
Texas Instruments
IC ADC 12BIT FOLD INTERP 68VQFN
MSP430FR5994IPN
MSP430FR5994IPN
Texas Instruments
IC MCU 16BIT 256KB FRAM 80LQFP
TCAN1043DRQ1
TCAN1043DRQ1
Texas Instruments
IC TRANSCEIVER 1/1 14SOIC
TUSB1105RTZRG4
TUSB1105RTZRG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 16QFN
SN65LVPE501RGER
SN65LVPE501RGER
Texas Instruments
IC REDRIVER PCIE 2CH 24VQFN
THS4131CD
THS4131CD
Texas Instruments
IC OPAMP DIFF 1 CIRCUIT 8SOIC
TL082IDG4
TL082IDG4
Texas Instruments
IC OPAMP JFET 2 CIRCUIT 8SOIC
TL3016ID
TL3016ID
Texas Instruments
IC HS LP COMP 8-SOIC
TPS22965QWDSGTQ1
TPS22965QWDSGTQ1
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 8WSON
UCD9081RHBT
UCD9081RHBT
Texas Instruments
IC SUPERVISOR 8 CHANNEL 32VQFN
ISO7641FCDWR
ISO7641FCDWR
Texas Instruments
DGTL ISO 2500VRMS 4CH GP 16SOIC