CSD19506KCS
  • Share:

Texas Instruments CSD19506KCS

Manufacturer No:
CSD19506KCS
Manufacturer:
Texas Instruments
Package:
Tube
Description:
MOSFET N-CH 80V 100A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19506KCS is an 80V, N-channel NexFET™ power MOSFET manufactured by Texas Instruments. Designed for power conversion applications, this MOSFET is housed in a TO-220 package and is optimized to minimize losses, making it a competitive choice in the market. Its target user groups include engineers and designers working on secondary-side synchronous rectification and motor control applications.

Key Specifications

ParameterValueUnitNotes
VDS80VDrain-Source Voltage
RDS(on) max at VGS=10V2.3Drain-Source On-Resistance
IDM (pulsed drain current)400AMaximum Pulsed Drain Current
QG (typ)120nCTotal Gate Charge
QGD (typ)20nCGate-Drain Charge
QGS (typ)37nCGate-Source Charge
VGS20VGate-Source Voltage
VGS(th) (typ)2.5VGate Threshold Voltage
ID (silicon limited at Tc=25°C)273AContinuous Drain Current
ID (package limited)150APackage Limited Drain Current

Key Features

  • Ultra-low Qg and Qgd for reduced switching losses.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche rated for enhanced reliability in rugged conditions.
  • Lead-free pin plating and RoHS compliance for environmental safety.
  • Halogen-free TO-220 plastic package for improved sustainability.

Applications

The CSD19506KCS is widely used in secondary-side synchronous rectification and motor control applications. Its low on-resistance and high efficiency make it ideal for power conversion systems, including switch-mode power supplies (SMPS), DC-DC converters, and motor drives. Its robust design ensures reliable performance in industrial and automotive electronics.

Q & A

1. What is the maximum drain-source voltage of the CSD19506KCS?

The maximum drain-source voltage is 80V.

2. What is the typical gate charge (QG) of this MOSFET?

The typical gate charge is 120nC.

3. Is the CSD19506KCS suitable for motor control applications?

Yes, it is designed for motor control and secondary-side synchronous rectification.

4. Does this MOSFET support avalanche operation?

Yes, it is avalanche rated for enhanced reliability.

5. What is the package type of the CSD19506KCS?

It comes in a TO-220 plastic package.

6. Is the CSD19506KCS RoHS compliant?

Yes, it is RoHS compliant and has lead-free pin plating.

7. What is the typical gate threshold voltage (VGS(th))?

The typical gate threshold voltage is 2.5V.

8. Can this MOSFET handle high pulsed drain currents?

Yes, it can handle pulsed drain currents up to 400A.

9. What is the maximum continuous drain current (ID)?

The maximum continuous drain current is 273A at Tc=25°C.

10. Is the CSD19506KCS halogen-free?

Yes, it is halogen-free, making it environmentally friendly.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:156 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12200 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$5.32
93

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP

Similar Products

Part Number CSD19506KCS CSD19536KCS CSD19501KCS CSD19503KCS CSD19505KCS
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 100 V 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 150A (Ta) 100A (Ta) 100A (Ta) 150A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V 6.6mOhm @ 60A, 10V 9.2mOhm @ 60A, 10V 3.8mOhm @ 100A, 6V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.2V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V 153 nC @ 10 V 50 nC @ 10 V 36 nC @ 10 V 76 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12200 pF @ 40 V 12000 pF @ 50 V 3980 pF @ 40 V 2730 pF @ 40 V 7820 pF @ 40 V
FET Feature - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 217W (Tc) 188W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

DAC8830ICD
DAC8830ICD
Texas Instruments
IC DAC 16BIT V-OUT 8SOIC
TRS208IDWR
TRS208IDWR
Texas Instruments
IC TRANSCEIVER FULL 4/4 24SOIC
SN65HVD1050DRG4
SN65HVD1050DRG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 8SOIC
LM5101CSD/NOPB
LM5101CSD/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 10WSON
ULN2003AIDG4
ULN2003AIDG4
Texas Instruments
TRANS 7NPN DARL 50V 0.5A 16SOIC
TLV809EA29DBZR
TLV809EA29DBZR
Texas Instruments
IC SUPERVISOR 1 CHANNEL SOT23-3
TL431ILPR5
TL431ILPR5
Texas Instruments
VOLTAGE REFERENCE
LM3481MM/NOPB
LM3481MM/NOPB
Texas Instruments
IC REG CTRLR MULT TOP 10MSOP
LM2678T-ADJ/NOPB
LM2678T-ADJ/NOPB
Texas Instruments
IC REG BUCK ADJ 5A TO220-7
TPS65400QRGZRQ1
TPS65400QRGZRQ1
Texas Instruments
IC REG BUCK ADJ 4A/2A QD 48VQFN
TPS73618MDBVREP
TPS73618MDBVREP
Texas Instruments
IC REG LINEAR 1.8V 400MA SOT23-5
LP2985AITL-3.3/NOPB
LP2985AITL-3.3/NOPB
Texas Instruments
IC REG LINEAR 3.3V 150MA 5DSBGA