CSD18541F5
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Texas Instruments CSD18541F5

Manufacturer No:
CSD18541F5
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2.2A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD18541F5 is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this component is part of the NexFET™ power MOSFET family, which is renowned for its efficiency and reliability. The CSD18541F5 is particularly suited for applications requiring low on-resistance and high switching speeds, making it an ideal choice for power conversion, motor control, and load switching in industrial, automotive, and consumer electronics. Its compact footprint and robust thermal performance further enhance its market competitiveness.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)75A@ TC = 25°C
On-Resistance (RDS(on))1.7@ VGS = 10V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)238W@ TC = 25°C
Operating Junction Temperature (TJ)-55 to 150°C
PackageTO-220

Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
  • High Switching Speed: Enables fast switching applications, reducing power loss.
  • Robust Thermal Performance: Ensures reliable operation under high power conditions.
  • Compact Design: Suitable for space-constrained applications.
  • Wide Operating Temperature Range: Supports operation in harsh environments.

Applications

The CSD18541F5 is widely used in various power management applications, including:

  • Power Conversion: DC-DC converters, inverters, and rectifiers.
  • Motor Control: Drives for brushed and brushless motors.
  • Load Switching: High-current switching in industrial and automotive systems.
  • Consumer Electronics: Power supplies and battery management systems.

Q & A

1. What is the maximum drain-source voltage of the CSD18541F5?

The maximum drain-source voltage is 60V.

2. What is the continuous drain current rating?

The continuous drain current is 75A at 25°C.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 1.7mΩ at VGS = 10V.

4. What is the operating temperature range?

The operating junction temperature ranges from -55°C to 150°C.

5. What package does the CSD18541F5 use?

It uses the TO-220 package.

6. Is this MOSFET suitable for high-frequency switching?

Yes, its high switching speed makes it ideal for high-frequency applications.

7. Can the CSD18541F5 be used in automotive applications?

Yes, it is suitable for automotive systems requiring robust power management.

8. What are the key advantages of the CSD18541F5?

Key advantages include low on-resistance, high switching speed, and excellent thermal performance.

9. What is the power dissipation rating?

The power dissipation is 238W at 25°C.

10. Where can I find detailed technical specifications?

Detailed specifications can be found in the official Texas Instruments datasheet for the CSD18541F5.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:65mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:777 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-SMD, No Lead
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Similar Products

Part Number CSD18541F5 CSD18541F5T
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 1A, 10V 65mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 777 pF @ 30 V 777 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR
Package / Case 3-SMD, No Lead 3-SMD, No Lead

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