CSD18541F5T
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Texas Instruments CSD18541F5T

Manufacturer No:
CSD18541F5T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2.2A 3PICOSTAR
Delivery:
Payment:
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Product Introduction

Overview

The CSD18541F5T is a 54mΩ, 60V N-channel FemtoFET™ MOSFET produced by Texas Instruments. Designed for industrial load switching applications, this component is optimized to minimize space usage in compact designs. It serves as a high-performance alternative to standard small-signal MOSFETs, offering reduced package size and enhanced efficiency. Its target user groups include engineers and designers working on space-constrained industrial applications, where reliability and compactness are critical.

Key Specifications

ParameterValueUnitNotes
VDS60VDrain-Source Voltage
Qg11nCTotal Gate Charge (10V)
Qgd1.6nCGate-to-Drain Charge
RDS(on)54Drain-Source On-Resistance (VGS=10V)
VGS(th)1.75VThreshold Voltage
ID2.2AContinuous Drain Current
IDM21APulsed Drain Current
PD500mWPower Dissipation
TJ, Tstg-55 to 150°COperating and Storage Temperature
EAS8.2mJAvalanche Energy (Single Pulse)

Key Features

  • Compact FemtoFET™ package (1.53mm × 0.77mm) for space-constrained designs.
  • Low RDS(on) of 54mΩ at VGS=10V, ensuring high efficiency.
  • Low gate charge (Qg=11nC) for fast switching performance.
  • Avalanche energy rated for enhanced reliability in harsh environments.
  • RoHS-compliant and lead-free, suitable for environmentally conscious applications.

Applications

The CSD18541F5T is ideal for a wide range of industrial and automotive applications. Its compact size and high efficiency make it suitable for load switching, power management, and motor control systems. In automotive electronics, it can be used in battery management systems and LED drivers. Additionally, its robust design ensures reliable performance in industrial automation, where space and efficiency are critical.

Q & A

1. What is the drain-source voltage rating of the CSD18541F5T?

The drain-source voltage (VDS) rating is 60V.

2. What is the typical gate charge (Qg) of this MOSFET?

The total gate charge (Qg) is 11nC at 10V.

3. Can this MOSFET handle high current pulses?

Yes, it can handle pulsed drain currents (IDM) up to 21A.

4. What is the operating temperature range of the CSD18541F5T?

It operates within a temperature range of -55°C to 150°C.

5. Is this MOSFET suitable for automotive applications?

Yes, it is designed for automotive and industrial applications, including load switching and power management.

6. What is the package size of the CSD18541F5T?

The package size is 1.53mm × 0.77mm, making it highly compact.

7. Does this MOSFET support fast switching?

Yes, its low gate charge (Qg) ensures fast switching performance.

8. Is the CSD18541F5T RoHS-compliant?

Yes, it is RoHS-compliant and lead-free.

9. What is the avalanche energy rating of this MOSFET?

The avalanche energy (EAS) rating is 8.2mJ for a single pulse.

10. Can this MOSFET be used in motor control systems?

Yes, its low RDS(on) and compact size make it suitable for motor control applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:65mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:777 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PICOSTAR
Package / Case:3-SMD, No Lead
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Similar Products

Part Number CSD18541F5T CSD18541F5
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 1A, 10V 65mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 777 pF @ 30 V 777 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PICOSTAR 3-PICOSTAR
Package / Case 3-SMD, No Lead 3-SMD, No Lead

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