CSD18532Q5B
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Texas Instruments CSD18532Q5B

Manufacturer No:
CSD18532Q5B
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18532Q5B, manufactured by Texas Instruments, is a high-performance N-channel NexFET™ power MOSFET designed for efficient power conversion applications. This component is part of TI's NexFET™ series, known for its ultra-low gate charge and low thermal resistance, making it ideal for high-efficiency power management solutions. The CSD18532Q5B is particularly suited for consumer electronics and industrial applications where minimizing power loss and optimizing thermal performance are critical.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)160Aat TC = 25°C
On-Resistance (RDS(on))3.2at VGS = 10V
Gate Charge (Qg)40nCat VGS = 10V
Power Dissipation (PD)200Wat TC = 25°C
Operating Temperature Range-55 to +175°C
PackageSON 5mm × 6mmPlastic

Key Features

  • Ultra-low gate charge (Qg) and gate-drain charge (Qgd) for reduced switching losses.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche-rated for enhanced reliability in harsh conditions.
  • Logic-level gate drive compatibility simplifies control circuitry.
  • RoHS-compliant and halogen-free, meeting environmental standards.

Applications

The CSD18532Q5B is widely used in various applications, including:

  • Power Conversion: Efficiently reduces losses in DC-DC converters and inverters.
  • Motor Control: Provides reliable switching in motor drive circuits.
  • Consumer Electronics: Enhances performance in power supplies for devices like laptops and gaming consoles.
  • Industrial Automation: Supports high-efficiency power management in industrial equipment.

Q & A

1. What is the maximum drain-source voltage of the CSD18532Q5B?

The maximum drain-source voltage is 60V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 3.2mΩ at a gate-source voltage of 10V.

3. Is the CSD18532Q5B suitable for high-frequency switching applications?

Yes, its ultra-low gate charge makes it ideal for high-frequency switching.

4. What is the operating temperature range of this component?

It operates within a temperature range of -55°C to +175°C.

5. Is the CSD18532Q5B RoHS-compliant?

Yes, it is RoHS-compliant and halogen-free.

6. What package does the CSD18532Q5B use?

It uses a SON 5mm × 6mm plastic package.

7. Can this MOSFET handle high current applications?

Yes, it supports a continuous drain current of up to 160A at 25°C.

8. What are the key advantages of the CSD18532Q5B?

Its ultra-low gate charge, low thermal resistance, and avalanche rating are key advantages.

9. Is the CSD18532Q5B suitable for automotive applications?

While it is not explicitly designed for automotive use, its robust design makes it suitable for similar high-reliability applications.

10. Where can I find detailed technical specifications for this MOSFET?

Detailed specifications are available in the official Texas Instruments datasheet for the CSD18532Q5B.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5070 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18532Q5B CSD19532Q5B CSD18532Q5BT CSD18502Q5B CSD18512Q5B CSD18532NQ5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 60 V 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta) 26A (Ta), 100A (Tc) 211A (Tc) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V 4.9mOhm @ 17A, 10V 3.2mOhm @ 25A, 10V 2.3mOhm @ 30A, 10V 1.6mOhm @ 30A, 10V 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 3.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 62 nC @ 10 V 58 nC @ 10 V 68 nC @ 10 V - 64 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5070 pF @ 30 V 4810 pF @ 50 V 5070 pF @ 30 V 5070 pF @ 20 V 7120 pF @ 20 V 5340 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 195W (Tc) 3.2W (Ta), 156W (Tc) 3.2W (Ta), 156W (Tc) 139W (Tc) 3.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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