CSD19532Q5B
  • Share:

Texas Instruments CSD19532Q5B

Manufacturer No:
CSD19532Q5B
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19532Q5B is a 100 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it an ideal choice for various high-performance electronic systems. The MOSFET features a low on-state resistance (RDS(on)) of 4 mΩ at VGS = 10 V and 4.6 mΩ at VGS = 6 V, which enhances its efficiency in power handling. It is packaged in a SON 5-mm × 6-mm plastic package, ensuring compact and efficient thermal management.

Key Specifications

Parameter Typical Value Unit
VDS - Drain-to-Source Voltage 100 V
VGS - Gate-to-Source Voltage ±20 V
ID - Continuous Drain Current (Package limited) 100 A
ID - Continuous Drain Current (Silicon limited), TC = 25°C 140 A
IDM - Pulsed Drain Current 400 A
PD - Power Dissipation, TC = 25°C 3.1 W
TJ, Tstg - Operating Junction and Storage Temperature Range -55 to 150 °C
VGS(th) - Gate-to-Source Threshold Voltage 2.6 V
RDS(on) - Drain-to-Source On Resistance (VGS = 10 V) 4
RDS(on) - Drain-to-Source On Resistance (VGS = 6 V) 4.6
Qg - Gate Charge Total (10 V) 48 nC
Qgd - Gate Charge Gate to Drain 8.7 nC

Key Features

  • Low Qg and Qgd for reduced switching losses
  • Low Thermal Resistance for efficient heat dissipation
  • Avalanche Rated for robustness in high-stress applications
  • Pb-Free Terminal Plating and RoHS Compliant for environmental compliance
  • Halogen Free for safer and more environmentally friendly use
  • SON 5-mm × 6-mm Plastic Package for compact and efficient design

Applications

  • Synchronous Rectifier for Offline and Isolated DC-DC Converters
  • Motor Control applications requiring high efficiency and reliability

Q & A

  1. What is the maximum drain-to-source voltage of the CSD19532Q5B?

    The maximum drain-to-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?

    The typical on-state resistance (RDS(on)) at VGS = 10 V is 4 mΩ.

  3. What is the gate-to-source threshold voltage (VGS(th))?

    The gate-to-source threshold voltage (VGS(th)) is typically 2.6 V.

  4. What are the operating junction and storage temperature ranges?

    The operating junction and storage temperature ranges are -55 to 150 °C.

  5. Is the CSD19532Q5B RoHS compliant?

    Yes, the CSD19532Q5B is RoHS compliant.

  6. What is the package type of the CSD19532Q5B?

    The package type is SON 5-mm × 6-mm Plastic Package.

  7. What are some typical applications of the CSD19532Q5B?

    Typical applications include synchronous rectifiers for offline and isolated DC-DC converters and motor control.

  8. What is the maximum pulsed drain current (IDM) of the CSD19532Q5B?

    The maximum pulsed drain current (IDM) is 400 A.

  9. What is the total gate charge (Qg) at 10 V?

    The total gate charge (Qg) at 10 V is 48 nC.

  10. Is the CSD19532Q5B halogen free?

    Yes, the CSD19532Q5B is halogen free.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4810 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.82
318

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD19532Q5B CSD19532Q5BT CSD18532Q5B CSD19502Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 17A, 10V 4.9mOhm @ 17A, 10V 3.2mOhm @ 25A, 10V 4.1mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.2V @ 250µA 2.2V @ 250µA 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 62 nC @ 10 V 58 nC @ 10 V 62 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4810 pF @ 50 V 4810 pF @ 50 V 5070 pF @ 30 V 4870 pF @ 40 V
FET Feature - - - -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc) 3.1W (Ta), 195W (Tc) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220

Related Product By Brand

TMS320DM6435ZWT6
TMS320DM6435ZWT6
Texas Instruments
IC DGTL MEDIA PROCESSOR 361-BGA
TMS320C206PZ80
TMS320C206PZ80
Texas Instruments
IC FIXED POINT DSP 100LQFP
SN65LVDM176DGKG4
SN65LVDM176DGKG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 8VSSOP
THS3001ID
THS3001ID
Texas Instruments
IC OPAMP CFA 1 CIRCUIT 8SOIC
OPA2683IDCNR
OPA2683IDCNR
Texas Instruments
IC OPAMP CFA 2 CIRCUIT SOT23-8
OPA380AIDRG4
OPA380AIDRG4
Texas Instruments
IC TRANSIMPEDANCE 1 CIRC 8SOIC
CD4059AM
CD4059AM
Texas Instruments
IC PROG DIV-BY-N COUNTER 24SOIC
CD14538BPWRG4
CD14538BPWRG4
Texas Instruments
IC MULTIVIBRATOR 100NS 16TSSOP
TPS54357PWP
TPS54357PWP
Texas Instruments
IC REG BUCK 5V 3A 16HTSSOP
TPS76801QDRG4
TPS76801QDRG4
Texas Instruments
IC REG LINEAR POS ADJ 1A 8SOIC
CC2640R2LRHBR
CC2640R2LRHBR
Texas Instruments
SIMPLELINK BLUETOOTH 5.1 LOW ENE
TMP709AIDBVR
TMP709AIDBVR
Texas Instruments
THERMOSTAT PROG ACT LOW SOT23-5