Overview
The CSD19532Q5B is a 100 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it an ideal choice for various high-performance electronic systems. The MOSFET features a low on-state resistance (RDS(on)) of 4 mΩ at VGS = 10 V and 4.6 mΩ at VGS = 6 V, which enhances its efficiency in power handling. It is packaged in a SON 5-mm × 6-mm plastic package, ensuring compact and efficient thermal management.
Key Specifications
Parameter | Typical Value | Unit |
---|---|---|
VDS - Drain-to-Source Voltage | 100 | V |
VGS - Gate-to-Source Voltage | ±20 | V |
ID - Continuous Drain Current (Package limited) | 100 | A |
ID - Continuous Drain Current (Silicon limited), TC = 25°C | 140 | A |
IDM - Pulsed Drain Current | 400 | A |
PD - Power Dissipation, TC = 25°C | 3.1 | W |
TJ, Tstg - Operating Junction and Storage Temperature Range | -55 to 150 | °C |
VGS(th) - Gate-to-Source Threshold Voltage | 2.6 | V |
RDS(on) - Drain-to-Source On Resistance (VGS = 10 V) | 4 | mΩ |
RDS(on) - Drain-to-Source On Resistance (VGS = 6 V) | 4.6 | mΩ |
Qg - Gate Charge Total (10 V) | 48 | nC |
Qgd - Gate Charge Gate to Drain | 8.7 | nC |
Key Features
- Low Qg and Qgd for reduced switching losses
- Low Thermal Resistance for efficient heat dissipation
- Avalanche Rated for robustness in high-stress applications
- Pb-Free Terminal Plating and RoHS Compliant for environmental compliance
- Halogen Free for safer and more environmentally friendly use
- SON 5-mm × 6-mm Plastic Package for compact and efficient design
Applications
- Synchronous Rectifier for Offline and Isolated DC-DC Converters
- Motor Control applications requiring high efficiency and reliability
Q & A
- What is the maximum drain-to-source voltage of the CSD19532Q5B?
The maximum drain-to-source voltage (VDS) is 100 V.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V?
The typical on-state resistance (RDS(on)) at VGS = 10 V is 4 mΩ.
- What is the gate-to-source threshold voltage (VGS(th))?
The gate-to-source threshold voltage (VGS(th)) is typically 2.6 V.
- What are the operating junction and storage temperature ranges?
The operating junction and storage temperature ranges are -55 to 150 °C.
- Is the CSD19532Q5B RoHS compliant?
Yes, the CSD19532Q5B is RoHS compliant.
- What is the package type of the CSD19532Q5B?
The package type is SON 5-mm × 6-mm Plastic Package.
- What are some typical applications of the CSD19532Q5B?
Typical applications include synchronous rectifiers for offline and isolated DC-DC converters and motor control.
- What is the maximum pulsed drain current (IDM) of the CSD19532Q5B?
The maximum pulsed drain current (IDM) is 400 A.
- What is the total gate charge (Qg) at 10 V?
The total gate charge (Qg) at 10 V is 48 nC.
- Is the CSD19532Q5B halogen free?
Yes, the CSD19532Q5B is halogen free.