CSD19532Q5B
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Texas Instruments CSD19532Q5B

Manufacturer No:
CSD19532Q5B
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD19532Q5B is a 100 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it an ideal choice for various high-performance electronic systems. The MOSFET features a low on-state resistance (RDS(on)) of 4 mΩ at VGS = 10 V and 4.6 mΩ at VGS = 6 V, which enhances its efficiency in power handling. It is packaged in a SON 5-mm × 6-mm plastic package, ensuring compact and efficient thermal management.

Key Specifications

Parameter Typical Value Unit
VDS - Drain-to-Source Voltage 100 V
VGS - Gate-to-Source Voltage ±20 V
ID - Continuous Drain Current (Package limited) 100 A
ID - Continuous Drain Current (Silicon limited), TC = 25°C 140 A
IDM - Pulsed Drain Current 400 A
PD - Power Dissipation, TC = 25°C 3.1 W
TJ, Tstg - Operating Junction and Storage Temperature Range -55 to 150 °C
VGS(th) - Gate-to-Source Threshold Voltage 2.6 V
RDS(on) - Drain-to-Source On Resistance (VGS = 10 V) 4
RDS(on) - Drain-to-Source On Resistance (VGS = 6 V) 4.6
Qg - Gate Charge Total (10 V) 48 nC
Qgd - Gate Charge Gate to Drain 8.7 nC

Key Features

  • Low Qg and Qgd for reduced switching losses
  • Low Thermal Resistance for efficient heat dissipation
  • Avalanche Rated for robustness in high-stress applications
  • Pb-Free Terminal Plating and RoHS Compliant for environmental compliance
  • Halogen Free for safer and more environmentally friendly use
  • SON 5-mm × 6-mm Plastic Package for compact and efficient design

Applications

  • Synchronous Rectifier for Offline and Isolated DC-DC Converters
  • Motor Control applications requiring high efficiency and reliability

Q & A

  1. What is the maximum drain-to-source voltage of the CSD19532Q5B?

    The maximum drain-to-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?

    The typical on-state resistance (RDS(on)) at VGS = 10 V is 4 mΩ.

  3. What is the gate-to-source threshold voltage (VGS(th))?

    The gate-to-source threshold voltage (VGS(th)) is typically 2.6 V.

  4. What are the operating junction and storage temperature ranges?

    The operating junction and storage temperature ranges are -55 to 150 °C.

  5. Is the CSD19532Q5B RoHS compliant?

    Yes, the CSD19532Q5B is RoHS compliant.

  6. What is the package type of the CSD19532Q5B?

    The package type is SON 5-mm × 6-mm Plastic Package.

  7. What are some typical applications of the CSD19532Q5B?

    Typical applications include synchronous rectifiers for offline and isolated DC-DC converters and motor control.

  8. What is the maximum pulsed drain current (IDM) of the CSD19532Q5B?

    The maximum pulsed drain current (IDM) is 400 A.

  9. What is the total gate charge (Qg) at 10 V?

    The total gate charge (Qg) at 10 V is 48 nC.

  10. Is the CSD19532Q5B halogen free?

    Yes, the CSD19532Q5B is halogen free.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4810 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD19532Q5B CSD19532Q5BT CSD18532Q5B CSD19502Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 17A, 10V 4.9mOhm @ 17A, 10V 3.2mOhm @ 25A, 10V 4.1mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.2V @ 250µA 2.2V @ 250µA 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 62 nC @ 10 V 58 nC @ 10 V 62 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4810 pF @ 50 V 4810 pF @ 50 V 5070 pF @ 30 V 4870 pF @ 40 V
FET Feature - - - -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc) 3.1W (Ta), 195W (Tc) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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