Overview
The CSD19502Q5B is an 80 V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management needs. It features a low on-state resistance of 3.4 mΩ at VGS = 10 V and is packaged in a compact SON 5-mm × 6-mm plastic package. The MOSFET is known for its ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), as well as its low thermal resistance, making it suitable for high-performance applications.
Key Specifications
| Parameter | Typical Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDS) | 80 | V |
| Gate Charge Total (Qg) at 10 V | 48 | nC |
| Gate Charge Gate to Drain (Qgd) | 8.6 | nC |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V | 3.4 | mΩ |
| Threshold Voltage (VGS(th)) | 2.7 | V |
| Continuous Drain Current (ID) | 100 | A |
| Pulsed Drain Current (IDM) | 400 | A |
| Operating Junction and Storage Temperature Range | -55 to 150 | °C |
| Package Type | SON 5-mm × 6-mm Plastic Package |
Key Features
- Ultra-Low Qg and Qgd for reduced switching losses.
- Low Thermal Resistance for improved heat dissipation.
- Avalanche Rated for robustness against transient voltages.
- Logic Level for compatibility with standard logic signals.
- Pb-Free Terminal Plating and RoHS Compliant for environmental compliance.
- Halogen Free to meet stringent environmental standards.
- Compact SON 5-mm × 6-mm plastic package for space-efficient designs.
Applications
- Secondary Side Synchronous Rectifier in power supplies and DC-DC converters.
- Motor Control applications requiring high efficiency and reliability.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD19502Q5B?
The maximum drain-to-source voltage (VDS) is 80 V.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V?
The typical on-state resistance (RDS(on)) at VGS = 10 V is 3.4 mΩ.
- What are the ultra-low gate charges (Qg and Qgd) of this MOSFET?
The typical gate charge total (Qg) is 48 nC, and the gate charge gate to drain (Qgd) is 8.6 nC.
- Is the CSD19502Q5B RoHS compliant and Pb-free?
Yes, the CSD19502Q5B is RoHS compliant and has Pb-free terminal plating.
- What is the operating junction and storage temperature range of this MOSFET?
The operating junction and storage temperature range is -55 to 150 °C.
- What are the typical applications of the CSD19502Q5B?
Typical applications include secondary side synchronous rectifiers and motor control.
- What is the package type of the CSD19502Q5B?
The package type is a SON 5-mm × 6-mm plastic package.
- What is the continuous drain current (ID) of this MOSFET?
The continuous drain current (ID) is 100 A.
- What is the pulsed drain current (IDM) of the CSD19502Q5B?
The pulsed drain current (IDM) is 400 A.
- Does the CSD19502Q5B have built-in ESD protection?
No, the CSD19502Q5B has limited built-in ESD protection and requires careful handling to prevent electrostatic damage.
