Overview
The CSD19502Q5BT is an 80 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management tasks. The MOSFET features a low on-state resistance (RDS(on)) of 3.4 mΩ at VGS = 10 V and ID = 19 A, and it is packaged in a SON 5-mm × 6-mm plastic package, which offers low thermal resistance. The device is also avalanche rated, logic level, and compliant with RoHS and halogen-free standards.
Key Specifications
| Parameter | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| VDS - Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | - | - | 80 | V |
| VGS - Gate-to-Source Voltage | - | - | - | ±20 | V |
| ID - Continuous Drain Current (Package limited) | - | - | - | 100 | A |
| ID - Continuous Drain Current (Silicon limited), TC = 25°C | - | - | - | 157 | A |
| IDM - Pulsed Drain Current | - | - | - | 400 | A |
| VGS(th) - Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.2 | 2.7 | 3.3 | V |
| RDS(on) - On-State Resistance | VGS = 6 V, ID = 19 A | 3.8 | 4.8 | mΩ | |
| RDS(on) - On-State Resistance | VGS = 10 V, ID = 19 A | 3.4 | 4.1 | mΩ | |
| Qg - Gate Charge Total (10 V) | VDS = 40 V, ID = 19 A | 48 | 62 | nC | |
| Qgd - Gate Charge Gate to Drain | - | - | 8.6 | nC | |
| TJ, Tstg - Operating Junction and Storage Temperature Range | - | - | - | –55 to 150 °C |
Key Features
- Ultra-Low Qg and Qgd for reduced switching losses.
- Low Thermal Resistance for improved heat dissipation.
- Avalanche Rated for robustness against transient conditions.
- Logic Level for compatibility with standard logic signals.
- Pb-Free Terminal Plating and RoHS Compliant for environmental sustainability.
- Halogen Free to meet stringent environmental standards.
- SON 5-mm × 6-mm Plastic Package for compact design and low profile.
Applications
- Secondary Side Synchronous Rectifier in power supplies and DC-DC converters.
- Motor Control applications requiring high efficiency and reliability.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD19502Q5BT?
The maximum drain-to-source voltage (VDS) is 80 V.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 19 A?
The typical on-state resistance (RDS(on)) is 3.4 mΩ.
- What is the gate charge total (Qg) at VDS = 40 V and ID = 19 A?
The gate charge total (Qg) is 48 nC.
- What is the operating junction and storage temperature range (TJ, Tstg)?
The operating junction and storage temperature range is –55 to 150 °C.
- Is the CSD19502Q5BT RoHS compliant and halogen-free?
Yes, the CSD19502Q5BT is RoHS compliant and halogen-free.
- What are the typical applications of the CSD19502Q5BT?
Typical applications include secondary side synchronous rectifier and motor control.
- What is the package type of the CSD19502Q5BT?
The package type is SON 5-mm × 6-mm plastic package.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 400 A.
- What is the threshold voltage (VGS(th)) range?
The threshold voltage (VGS(th)) range is 2.2 to 3.3 V.
- Is the CSD19502Q5BT avalanche rated?
Yes, the CSD19502Q5BT is avalanche rated.
