Overview
The CSD19532Q5BT is a 100 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management needs. It features a low on-state resistance and is packaged in a SON 5-mm × 6-mm plastic package, which is Pb-Free, RoHS compliant, and halogen-free.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDS) | 100 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 100 (Package limited), 140 (Silicon limited at TC = 25°C) | A |
| Pulsed Drain Current (IDM) | 400 | A |
| On-State Resistance (RDS(on)) at VGS = 6 V | 4.6 | mΩ |
| On-State Resistance (RDS(on)) at VGS = 10 V | 4 | mΩ |
| Threshold Voltage (VGS(th)) | 2.6 | V |
| Gate Charge Total (Qg) at 10 V | 48 | nC |
| Gate Charge Gate to Drain (Qgd) | 8.7 | nC |
| Power Dissipation (PD) | 3.1 | W |
| Operating Junction and Storage Temperature Range | -55 to 150 | °C |
| Avalanche Energy (EAS) | 274 | mJ |
Key Features
- Low Qg and Qgd for reduced switching losses.
- Low thermal resistance.
- Avalanche rated for robust performance under transient conditions.
- Pb-Free terminal plating, RoHS compliant, and halogen-free.
- SON 5-mm × 6-mm plastic package for compact design.
Applications
- Synchronous rectifier for offline and isolated DC-DC converters.
- Motor control applications.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD19532Q5BT?
The maximum drain-to-source voltage (VDS) is 100 V.
- What is the on-state resistance (RDS(on)) at VGS = 10 V?
The on-state resistance (RDS(on)) at VGS = 10 V is 4 mΩ.
- What is the threshold voltage (VGS(th)) of the CSD19532Q5BT?
The threshold voltage (VGS(th)) is 2.6 V.
- What are the typical applications of the CSD19532Q5BT?
Typical applications include synchronous rectifiers for offline and isolated DC-DC converters and motor control.
- Is the CSD19532Q5BT RoHS compliant and halogen-free?
Yes, the CSD19532Q5BT is RoHS compliant and halogen-free.
- What is the package type of the CSD19532Q5BT?
The package type is a SON 5-mm × 6-mm plastic package.
- What is the maximum continuous drain current (ID) for the CSD19532Q5BT?
The maximum continuous drain current (ID) is 100 A (package limited) and 140 A (silicon limited at TC = 25°C).
- What is the maximum pulsed drain current (IDM) of the CSD19532Q5BT?
The maximum pulsed drain current (IDM) is 400 A.
- What is the operating junction and storage temperature range of the CSD19532Q5BT?
The operating junction and storage temperature range is -55 to 150 °C.
- What is the avalanche energy (EAS) rating of the CSD19532Q5BT?
The avalanche energy (EAS) rating is 274 mJ.
