CSD18532Q5BT
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Texas Instruments CSD18532Q5BT

Manufacturer No:
CSD18532Q5BT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18532Q5BT is a 60-V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, featuring a low on-state resistance of 2.5 mΩ and a high drain-to-source voltage rating of 60 V. Although the production of this device has been discontinued, it remains relevant for existing designs and applications. The MOSFET is packaged in a SON 5-mm × 6-mm plastic package, which is lead-free, RoHS compliant, and halogen-free.

Key Specifications

Parameter Test Conditions Typical Value Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 60 V
VGS - Gate-to-Source Voltage ±20 V
ID - Continuous Drain Current (Package Limited) 100 A
ID - Continuous Drain Current (Silicon Limited), TC = 25°C 172 A
IDM - Pulsed Drain Current 400 A
RDS(on) - Drain-to-Source On-Resistance (VGS = 10 V, ID = 25 A) 2.5
VGS(th) - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.8 V
Qg - Gate Charge Total (10 V) VDS = 30 V, ID = 25 A 44 nC
Qgd - Gate Charge Gate-to-Drain 6.9 nC
TJ - Operating Junction Temperature –55 to 150 °C

Key Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Isolated Converter Primary Side Switch
  • Motor Control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18532Q5BT?

    The maximum drain-to-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance of the CSD18532Q5BT?

    The typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 25 A is 2.5 mΩ.

  3. What are the key features of the CSD18532Q5BT?

    The key features include ultra-low Qg and Qgd, low-thermal resistance, avalanche rating, logic level, lead-free terminal plating, RoHS compliance, and halogen-free construction.

  4. What are the common applications of the CSD18532Q5BT?

    Common applications include DC-DC conversion, secondary side synchronous rectifier, isolated converter primary side switch, and motor control.

  5. What is the package type of the CSD18532Q5BT?

    The device is packaged in a SON 5-mm × 6-mm plastic package.

  6. Is the CSD18532Q5BT RoHS compliant?
  7. What is the maximum continuous drain current for the CSD18532Q5BT?

    The maximum continuous drain current (package limited) is 100 A, and silicon limited is 172 A at TC = 25°C.

  8. What is the gate-to-source threshold voltage of the CSD18532Q5BT?

    The gate-to-source threshold voltage (VGS(th)) is typically 1.8 V.

  9. What is the operating junction temperature range for the CSD18532Q5BT?

    The operating junction temperature range is –55 to 150°C.

  10. Is the CSD18532Q5BT still in production?

    No, the production of the CSD18532Q5BT has been discontinued by Texas Instruments.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5070 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18532Q5BT CSD19532Q5BT CSD18502Q5BT CSD18512Q5BT CSD18532NQ5BT CSD18532Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 40 V 40 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta) 211A (Tc) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V 4.9mOhm @ 17A, 10V 2.3mOhm @ 30A, 10V 1.6mOhm @ 30A, 10V 3.4mOhm @ 25A, 10V 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 3.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 3.4V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 62 nC @ 10 V 33 nC @ 4.5 V 98 nC @ 10 V 64 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5070 pF @ 30 V 4810 pF @ 50 V 5070 pF @ 20 V 7120 pF @ 20 V 5340 pF @ 30 V 5070 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 195W (Tc) 3.2W (Ta), 156W (Tc) 139W (Tc) 3.1W (Ta), 156W (Tc) 3.2W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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