Overview
The CSD18512Q5BT is a 40 V N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management tasks. It features a low on-resistance (RDS(on)) of 1.3 mΩ at VGS = 10 V, low thermal resistance, and is avalanche rated. The MOSFET is packaged in a 5 mm × 6 mm SON (Small Outline No-lead) package, which is Pb-free, RoHS compliant, and halogen-free.
Key Specifications
| Parameter | Typical Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 40 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 100 | A |
| Pulsed Drain Current (IDM) | 400 | A |
| Power Dissipation (PD) | 3.1 | W |
| Operating Junction Temperature (TJ) | -55 to 150 | °C |
| Gate Charge Total (Qg) | 75 | nC |
| Gate Charge Gate to Drain (Qgd) | 13.3 | nC |
| Drain to Source On Resistance (RDS(on)) at VGS = 10 V | 1.3 | mΩ |
| Threshold Voltage (VGS(th)) | 1.6 | V |
Key Features
- Low RDS(on) of 1.3 mΩ at VGS = 10 V
- Low thermal resistance
- Avalanche rated
- Logic level gate drive
- Pb-free terminal plating
- RoHS compliant and halogen-free
- SON 5 mm × 6 mm plastic package
Applications
- DC-DC conversion
- Secondary side synchronous rectifier
- Motor control
Q & A
- What is the maximum drain to source voltage (VDS) of the CSD18512Q5BT?
The maximum drain to source voltage (VDS) is 40 V.
- What is the typical on-resistance (RDS(on)) of the CSD18512Q5BT at VGS = 10 V?
The typical on-resistance (RDS(on)) at VGS = 10 V is 1.3 mΩ.
- What are the operating junction and storage temperatures for the CSD18512Q5BT?
The operating junction and storage temperatures range from -55°C to 150°C.
- Is the CSD18512Q5BT RoHS compliant and halogen-free?
Yes, the CSD18512Q5BT is RoHS compliant and halogen-free.
- What are the typical applications of the CSD18512Q5BT?
The typical applications include DC-DC conversion, secondary side synchronous rectifier, and motor control.
- What is the package type of the CSD18512Q5BT?
The package type is SON 5 mm × 6 mm.
- What is the maximum pulsed drain current (IDM) of the CSD18512Q5BT?
The maximum pulsed drain current (IDM) is 400 A.
- What is the gate charge total (Qg) of the CSD18512Q5BT?
The gate charge total (Qg) is 75 nC.
- Is the CSD18512Q5BT avalanche rated?
Yes, the CSD18512Q5BT is avalanche rated.
- What is the threshold voltage (VGS(th)) of the CSD18512Q5BT?
The threshold voltage (VGS(th)) is typically 1.6 V.
