CSD18510Q5BT
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Texas Instruments CSD18510Q5BT

Manufacturer No:
CSD18510Q5BT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 300A 8VSON
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The CSD18510Q5B is a 40-V, N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, featuring a low on-state resistance (RDS(on)) and low thermal resistance. It is packaged in a SON 5-mm × 6-mm plastic package, making it suitable for a variety of high-power applications. The MOSFET is logic level, lead-free, RoHS compliant, and halogen-free, ensuring environmental and safety standards are met.

Key Specifications

Parameter Typical Value Unit
VDS (Drain-to-Source Voltage) 40 V
VGS (Gate-to-Source Voltage) ±20 V
ID (Continuous Drain Current, Package Limited) 100 A
ID (Continuous Drain Current, Silicon Limited at TC = 25°C) 300 A
IDM (Max Pulsed Drain Current) 400 A
RDS(on) at VGS = 4.5 V 1.2 mΩ
RDS(on) at VGS = 10 V 0.79 mΩ
VGS(th) (Gate-to-Source Threshold Voltage) 1.7 V V
Qg (Gate Charge Total at 10 V) 118 nC nC
Qgd (Gate Charge Gate-to-Drain) 21 nC nC
RθJC (Junction-to-Case Thermal Resistance) 0.8 °C/W °C/W
RθJA (Junction-to-Ambient Thermal Resistance) 50 °C/W °C/W

Key Features

  • Low RDS(on) for reduced power losses
  • Low thermal resistance for efficient heat dissipation
  • Avalanche rated for robustness in high-stress applications
  • Logic level for easy integration with digital circuits
  • Lead-free terminal plating and RoHS compliant for environmental compliance
  • Halogen-free to meet safety and environmental standards
  • SON 5-mm × 6-mm plastic package for compact design

Applications

  • DC-DC conversion for high-efficiency power supplies
  • Secondary side synchronous rectifier in power conversion systems
  • Motor control applications requiring high current and low resistance

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18510Q5B?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?

    The typical on-state resistance (RDS(on)) at VGS = 10 V is 0.79 mΩ.

  3. What is the gate-to-source threshold voltage (VGS(th))?

    The gate-to-source threshold voltage (VGS(th)) is typically 1.7 V.

  4. What is the maximum continuous drain current (ID) for the package?

    The maximum continuous drain current (ID) for the package is 100 A.

  5. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 400 A.

  6. Is the CSD18510Q5B RoHS compliant and halogen-free?

    Yes, the CSD18510Q5B is RoHS compliant and halogen-free.

  7. What is the junction-to-case thermal resistance (RθJC)?

    The junction-to-case thermal resistance (RθJC) is 0.8 °C/W.

  8. What are the typical applications of the CSD18510Q5B?

    The typical applications include DC-DC conversion, secondary side synchronous rectifier, and motor control.

  9. What is the package type and dimensions of the CSD18510Q5B?

    The package type is SON 5-mm × 6-mm plastic package.

  10. Is the CSD18510Q5B logic level compatible?

    Yes, the CSD18510Q5B is logic level compatible.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.96mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:153 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11400 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18510Q5BT CSD18512Q5BT CSD18540Q5BT CSD18510Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 211A (Tc) 100A (Ta) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.96mOhm @ 32A, 10V 1.6mOhm @ 30A, 10V 2.2mOhm @ 28A, 10V 0.96mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.2V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V 98 nC @ 10 V 53 nC @ 10 V 153 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11400 pF @ 20 V 7120 pF @ 20 V 4230 pF @ 30 V 11400 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) 156W (Tc) 139W (Tc) 3.1W (Ta), 195W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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