Overview
The CSD18510Q5B is a 40-V, N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, offering low on-state resistance (RDS(on)) and low thermal resistance. It is packaged in a SON 5-mm × 6-mm plastic package, making it suitable for a variety of high-power applications. The MOSFET is logic level, lead-free, RoHS compliant, and halogen-free, ensuring environmental and safety standards are met.
Key Specifications
| Parameter | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| VDS - Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | - | - | 40 | V |
| VGS - Gate-to-Source Voltage | - | - | - | ±20 | V |
| ID - Continuous Drain Current (Package Limited) | - | - | - | 100 | A |
| ID - Continuous Drain Current (Silicon Limited), TC = 25°C | - | - | - | 300 | A |
| IDM - Pulsed Drain Current, TA = 25°C | - | - | - | 400 | A |
| VGS(th) - Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.2 | 1.7 | 2.3 | V |
| RDS(on) - Drain-to-Source On Resistance | VGS = 4.5 V, ID = 32 A | 1.2 | 1.6 | - | mΩ |
| RDS(on) - Drain-to-Source On Resistance | VGS = 10 V, ID = 32 A | 0.79 | 0.96 | - | mΩ |
| Qg - Gate Charge Total (10 V) | VDS = 20 V, ID = 32 A | 118 | 153 | - | nC |
| Qgd - Gate Charge Gate-to-Drain | - | - | - | 21 | nC |
| TJ - Operating Junction Temperature | - | - | - | -55 to 150 | °C |
Key Features
- Low RDS(on) for reduced power losses
- Low thermal resistance
- Avalanche rated for robust performance
- Logic level for easy integration with digital circuits
- Lead-free terminal plating and RoHS compliant
- Halogen-free for environmental compliance
- SON 5-mm × 6-mm plastic package for compact designs
Applications
- DC-DC conversion
- Secondary side synchronous rectifier
- Motor control
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD18510Q5B MOSFET?
The maximum drain-to-source voltage (VDS) is 40 V.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 32 A?
The typical on-state resistance (RDS(on)) is 0.79 mΩ.
- What is the gate-to-source threshold voltage (VGS(th)) range?
The gate-to-source threshold voltage (VGS(th)) range is from 1.2 V to 2.3 V.
- What is the maximum continuous drain current (ID) for the package?
The maximum continuous drain current (ID) for the package is 100 A.
- What is the maximum pulsed drain current (IDM) at TA = 25°C?
The maximum pulsed drain current (IDM) at TA = 25°C is 400 A.
- What are the operating junction and storage temperatures for the CSD18510Q5B?
The operating junction and storage temperatures range from -55°C to 150°C.
- Is the CSD18510Q5B MOSFET RoHS compliant and halogen-free?
Yes, the CSD18510Q5B MOSFET is RoHS compliant and halogen-free.
- What package type is used for the CSD18510Q5B MOSFET?
The CSD18510Q5B MOSFET is packaged in a SON 5-mm × 6-mm plastic package.
- What are some typical applications for the CSD18510Q5B MOSFET?
Typical applications include DC-DC conversion, secondary side synchronous rectifier, and motor control.
- What is the total gate charge (Qg) at VGS = 10 V and VDS = 20 V?
The total gate charge (Qg) at VGS = 10 V and VDS = 20 V is 118 nC.
