CSD18540Q5B
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Texas Instruments CSD18540Q5B

Manufacturer No:
CSD18540Q5B
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18540Q5B is a 60-V, N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it an ideal choice for high-efficiency power management systems. The MOSFET features a low on-state resistance of 1.8 mΩ and is packaged in a SON 5-mm × 6-mm plastic package, which helps in reducing thermal resistance and enhancing overall performance.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDS) 60 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) - Package Limited 100 A
Continuous Drain Current (ID) - Silicon Limited, TC = 25°C 205 A
Pulsed Drain Current (IDM), TA = 25°C 400 A
Power Dissipation (PD), TC = 25°C 3.8 W
Operating Junction Temperature (TJ) -55 to 175 °C
Avalanche Energy (EAS), Single Pulse 320 mJ
On-State Resistance (RDS(on)) 1.8

Key Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

The CSD18540Q5B is suitable for various power conversion applications, including but not limited to:

  • DC-DC Converters
  • Power Supplies
  • Motor Control Systems
  • High-Efficiency Power Management Systems

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18540Q5B?

    The maximum drain-to-source voltage (VDS) is 60 V.

  2. What is the on-state resistance (RDS(on)) of the CSD18540Q5B?

    The on-state resistance (RDS(on)) is 1.8 mΩ.

  3. What is the continuous drain current (ID) for the CSD18540Q5B?

    The continuous drain current (ID) is 100 A (package limited) and 205 A (silicon limited at TC = 25°C).

  4. Is the CSD18540Q5B RoHS compliant?

    Yes, the CSD18540Q5B is RoHS compliant.

  5. What is the operating junction temperature range for the CSD18540Q5B?

    The operating junction temperature range is -55 to 175 °C.

  6. What type of package does the CSD18540Q5B come in?

    The CSD18540Q5B comes in a SON 5-mm × 6-mm plastic package.

  7. Is the CSD18540Q5B avalanche rated?

    Yes, the CSD18540Q5B is avalanche rated.

  8. What is the typical power dissipation (PD) for the CSD18540Q5B at TC = 25°C?

    The typical power dissipation (PD) at TC = 25°C is 3.8 W.

  9. What are some common applications for the CSD18540Q5B?

    Common applications include DC-DC converters, power supplies, motor control systems, and high-efficiency power management systems.

  10. Does the CSD18540Q5B have lead-free terminal plating?

    Yes, the CSD18540Q5B has lead-free terminal plating.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4230 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18540Q5B CSD18540Q5BT CSD18510Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 28A, 10V 2.2mOhm @ 28A, 10V 0.96mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 53 nC @ 10 V 153 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 30 V 4230 pF @ 30 V 11400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc) 3.1W (Ta), 195W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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