CSD18532NQ5BT
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Texas Instruments CSD18532NQ5BT

Manufacturer No:
CSD18532NQ5BT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18532NQ5BT is a high-performance N-Channel NexFET™ power MOSFET from Texas Instruments. This device is designed to minimize losses in power conversion applications, offering ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), as well as low thermal resistance. The MOSFET features a compact 5-mm × 6-mm SON (Small Outline No-lead) package, making it ideal for applications where space is limited.

With a drain-to-source voltage (VDS) of 60V and a continuous drain current (ID) of 100A, this MOSFET is suited for a wide range of power management applications. It is RoHS compliant, halogen-free, and has lead-free terminal plating, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) 100 A
Gate-to-Source Voltage (VGS) ±20 V
On-State Resistance (RDS(on)) @ VGS = 10V 2.7
Threshold Voltage (VGS(th)) 2.8 V
Gate Charge Total (Qg) @ 10V 49 nC
Gate Charge Gate-to-Drain (Qgd) 7.9 nC
Power Dissipation (PD) @ TA 3.1 W
Operating Junction Temperature (TJ) -55 to 150 °C
Avalanche Energy (EAS) 360 mJ
Package Type SON 5-mm × 6-mm Plastic Package

Key Features

  • Ultra-Low Qg and Qgd for reduced switching losses
  • Low Thermal Resistance for improved heat dissipation
  • Avalanche Rated for robustness against transient conditions
  • Lead-Free Terminal Plating and RoHS Compliant for environmental sustainability
  • Halogen Free to meet stringent environmental standards
  • Compact SON 5-mm × 6-mm Plastic Package for space-efficient designs

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Isolated Converter Primary Side Switch
  • Motor Control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18532NQ5BT?

    The maximum drain-to-source voltage (VDS) is 60V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 100A.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 10V?

    The typical on-state resistance (RDS(on)) at VGS = 10V is 2.7 mΩ.

  4. What are the key features of the CSD18532NQ5BT?

    The key features include ultra-low Qg and Qgd, low thermal resistance, avalanche rating, lead-free terminal plating, RoHS compliance, and a halogen-free design.

  5. In what types of applications is the CSD18532NQ5BT commonly used?

    It is commonly used in DC-DC conversion, secondary side synchronous rectifier, isolated converter primary side switch, and motor control applications.

  6. What is the operating junction temperature range of the CSD18532NQ5BT?

    The operating junction temperature range is -55°C to 150°C.

  7. Is the CSD18532NQ5BT RoHS compliant?

    Yes, the CSD18532NQ5BT is RoHS compliant.

  8. What is the package type of the CSD18532NQ5BT?

    The package type is a SON 5-mm × 6-mm Plastic Package.

  9. What is the maximum gate-to-source voltage (VGS) rating?

    The maximum gate-to-source voltage (VGS) rating is ±20V.

  10. What is the avalanche energy (EAS) rating of the CSD18532NQ5BT?

    The avalanche energy (EAS) rating is 360 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5340 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18532NQ5BT CSD18532Q5BT CSD18532NQ5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V 3.2mOhm @ 25A, 10V 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 2.2V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 58 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5340 pF @ 30 V 5070 pF @ 30 V 5340 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 156W (Tc) 3.2W (Ta), 156W (Tc) 3.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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