CSD18532NQ5BT
  • Share:

Texas Instruments CSD18532NQ5BT

Manufacturer No:
CSD18532NQ5BT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18532NQ5BT is a high-performance N-Channel NexFET™ power MOSFET from Texas Instruments. This device is designed to minimize losses in power conversion applications, offering ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), as well as low thermal resistance. The MOSFET features a compact 5-mm × 6-mm SON (Small Outline No-lead) package, making it ideal for applications where space is limited.

With a drain-to-source voltage (VDS) of 60V and a continuous drain current (ID) of 100A, this MOSFET is suited for a wide range of power management applications. It is RoHS compliant, halogen-free, and has lead-free terminal plating, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) 100 A
Gate-to-Source Voltage (VGS) ±20 V
On-State Resistance (RDS(on)) @ VGS = 10V 2.7
Threshold Voltage (VGS(th)) 2.8 V
Gate Charge Total (Qg) @ 10V 49 nC
Gate Charge Gate-to-Drain (Qgd) 7.9 nC
Power Dissipation (PD) @ TA 3.1 W
Operating Junction Temperature (TJ) -55 to 150 °C
Avalanche Energy (EAS) 360 mJ
Package Type SON 5-mm × 6-mm Plastic Package

Key Features

  • Ultra-Low Qg and Qgd for reduced switching losses
  • Low Thermal Resistance for improved heat dissipation
  • Avalanche Rated for robustness against transient conditions
  • Lead-Free Terminal Plating and RoHS Compliant for environmental sustainability
  • Halogen Free to meet stringent environmental standards
  • Compact SON 5-mm × 6-mm Plastic Package for space-efficient designs

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Isolated Converter Primary Side Switch
  • Motor Control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18532NQ5BT?

    The maximum drain-to-source voltage (VDS) is 60V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 100A.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 10V?

    The typical on-state resistance (RDS(on)) at VGS = 10V is 2.7 mΩ.

  4. What are the key features of the CSD18532NQ5BT?

    The key features include ultra-low Qg and Qgd, low thermal resistance, avalanche rating, lead-free terminal plating, RoHS compliance, and a halogen-free design.

  5. In what types of applications is the CSD18532NQ5BT commonly used?

    It is commonly used in DC-DC conversion, secondary side synchronous rectifier, isolated converter primary side switch, and motor control applications.

  6. What is the operating junction temperature range of the CSD18532NQ5BT?

    The operating junction temperature range is -55°C to 150°C.

  7. Is the CSD18532NQ5BT RoHS compliant?

    Yes, the CSD18532NQ5BT is RoHS compliant.

  8. What is the package type of the CSD18532NQ5BT?

    The package type is a SON 5-mm × 6-mm Plastic Package.

  9. What is the maximum gate-to-source voltage (VGS) rating?

    The maximum gate-to-source voltage (VGS) rating is ±20V.

  10. What is the avalanche energy (EAS) rating of the CSD18532NQ5BT?

    The avalanche energy (EAS) rating is 360 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5340 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.05
146

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD18532NQ5BT CSD18532Q5BT CSD18532NQ5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V 3.2mOhm @ 25A, 10V 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 2.2V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 58 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5340 pF @ 30 V 5070 pF @ 30 V 5340 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 156W (Tc) 3.2W (Ta), 156W (Tc) 3.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

SRC4192IDBR
SRC4192IDBR
Texas Instruments
IC SAMPLE RATE CONVERTER 28SSOP
MSC1211Y5PAGT
MSC1211Y5PAGT
Texas Instruments
IC ADC/DAC 1K 64TQFP
MSP430FR5994IPN
MSP430FR5994IPN
Texas Instruments
IC MCU 16BIT 256KB FRAM 80LQFP
TLV2711IDBVR
TLV2711IDBVR
Texas Instruments
IC OPAMP GP 1 CIRCUIT SOT23-5
TLV2461CDR
TLV2461CDR
Texas Instruments
IC OPAMP GP 1 CIRCUIT 8SOIC
CD4059AM
CD4059AM
Texas Instruments
IC PROG DIV-BY-N COUNTER 24SOIC
SN74AC573DW
SN74AC573DW
Texas Instruments
IC OCTAL TRANSP LATCH 20-SOIC
TPS2032DR
TPS2032DR
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 8SOIC
REG1117A-1.8/2K5
REG1117A-1.8/2K5
Texas Instruments
IC REG LINEAR 1.8V 1A SOT223-4
TPS71719DCKT
TPS71719DCKT
Texas Instruments
IC REG LINEAR 1.9V 150MA SC70-5
ISO721MMDREP
ISO721MMDREP
Texas Instruments
DGTL ISO 4000VPK 1CH GP 8SOIC
ISO7221CDRG4
ISO7221CDRG4
Texas Instruments
DGTL ISO 2500VRMS 2CH GP 8SOIC