CSD18532NQ5B
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Texas Instruments CSD18532NQ5B

Manufacturer No:
CSD18532NQ5B
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 22A/100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18532NQ5B is a 60-V, N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications and is packaged in a 5-mm × 6-mm SON (Small Outline No-lead) package with 8 pins. The MOSFET features ultra-low gate charge (Qg and Qgd) and low thermal resistance, making it suitable for high-efficiency power conversion systems.

Key Specifications

Parameter Typical Value Unit
Drain-to-Source Voltage (VDS) 60 V
Gate Charge Total (Qg) at 10 V 49 nC
Gate Charge Gate-to-Drain (Qgd) 7.9 nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V 2.7 mΩ
Gate-to-Source Threshold Voltage (VGS(th)) 2.8 V
Continuous Drain Current (ID) at TC = 25°C 151 A
Pulsed Drain Current (IDM) 400 A
Power Dissipation (PD) at TC = 25°C 3.1 W
Operating Junction Temperature (TJ) -55 to 150 °C
Avalanche Energy, Single Pulse (EAS) 360 mJ

Key Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Isolated Converter Primary Side Switch
  • Motor Control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18532NQ5B?

    The maximum drain-to-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance of the CSD18532NQ5B at VGS = 10 V?

    The typical drain-to-source on-resistance (RDS(on)) at VGS = 10 V is 2.7 mΩ.

  3. What are the key features of the CSD18532NQ5B?

    The key features include ultra-low Qg and Qgd, low thermal resistance, avalanche rating, lead-free terminal plating, RoHS compliance, and halogen-free construction.

  4. What are the typical applications of the CSD18532NQ5B?

    Typical applications include DC-DC conversion, secondary side synchronous rectifier, isolated converter primary side switch, and motor control.

  5. What is the operating temperature range of the CSD18532NQ5B?

    The operating temperature range is -55°C to 150°C.

  6. What is the package type and size of the CSD18532NQ5B?

    The device is packaged in a SON (Small Outline No-lead) package, 5-mm × 6-mm in size, with 8 pins.

  7. Is the CSD18532NQ5B RoHS compliant and halogen-free?
  8. What is the maximum continuous drain current of the CSD18532NQ5B at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 151 A.

  9. What is the maximum pulsed drain current of the CSD18532NQ5B?

    The maximum pulsed drain current (IDM) is 400 A.

  10. What is the power dissipation of the CSD18532NQ5B at TC = 25°C?

    The power dissipation (PD) at TC = 25°C is 3.1 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5340 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18532NQ5B CSD18532Q5B CSD18532NQ5BT
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V 3.2mOhm @ 25A, 10V 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 2.2V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 58 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5340 pF @ 30 V 5070 pF @ 30 V 5340 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 3.2W (Ta) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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