Overview
The BSS138 is an N-Channel Logic Level Enhancement Mode Field Effect Transistor produced by Taiwan Semiconductor Corporation. This device is designed using high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Key Specifications
| Parameter | Symbol | Unit | Min | Max | |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | V | - | - | 50 |
| Gate-Source Voltage | VGS | V | -20 | - | 20 |
| Continuous Drain Current (TA = 25°C) | ID | A | - | - | 0.26 |
| Pulsed Drain Current | IDM | A | - | - | 1.04 |
| Gate Threshold Voltage | VGS(th) | V | 0.5 | 1.0 | 1.5 |
| On-State Resistance (VGS = 10 V, ID = 0.22 A) | RDS(on) | Ω | 0.7 | 3.5 | - |
| Turn-On Delay Time | td(on) | ns | 2.5 | - | 5 |
| Turn-Off Delay Time | td(off) | ns | 20 | - | 36 |
| Junction to Ambient Thermal Resistance | RθJA | °C/W | - | - | 350 |
Key Features
- Logic Level N-Channel MOSFET with low on-state resistance (3.5 Ω at VGS = 10 V, ID = 0.22 A)
- High density cell design for extremely low RDS(on)
- Rugged and reliable performance
- Compact industry standard SOT-23 surface mount package
- Pb-free and halogen-free
- Low input capacitance (approximately 40 pF)
- High switching speed (turn-on and turn-off times around 20 ns each)
Applications
- Low current and low voltage switching applications
- Logic level shifters
- DC-DC converters
- eMobility applications
- Power management applications
- Small servo motor control and power MOSFET gate drivers
Q & A
- What is the maximum drain-source voltage (VDS) of the BSS138 MOSFET?
The maximum drain-source voltage (VDS) of the BSS138 MOSFET is 50 V.
- What is the typical on-state resistance (RDS(on)) of the BSS138 MOSFET?
The typical on-state resistance (RDS(on)) of the BSS138 MOSFET is 3.5 Ω at VGS = 10 V, ID = 0.22 A.
- What is the gate threshold voltage (VGS(th)) range of the BSS138 MOSFET?
The gate threshold voltage (VGS(th)) range of the BSS138 MOSFET is from 0.5 V to 1.5 V.
- What is the continuous drain current (ID) of the BSS138 MOSFET at 25°C?
The continuous drain current (ID) of the BSS138 MOSFET at 25°C is 0.26 A.
- What is the typical turn-on and turn-off time of the BSS138 MOSFET?
The typical turn-on and turn-off time of the BSS138 MOSFET is around 20 ns each.
- In what package is the BSS138 MOSFET available?
The BSS138 MOSFET is available in the SOT-23 surface mount package.
- Is the BSS138 MOSFET Pb-free and halogen-free?
Yes, the BSS138 MOSFET is Pb-free and halogen-free.
- What are some common applications of the BSS138 MOSFET?
The BSS138 MOSFET is commonly used in low current and low voltage switching applications, logic level shifters, DC-DC converters, eMobility applications, and power management applications.
- What is the junction to ambient thermal resistance (RθJA) of the BSS138 MOSFET?
The junction to ambient thermal resistance (RθJA) of the BSS138 MOSFET is 350 °C/W.
- Are there any equivalent MOSFETs to the BSS138?
Yes, some equivalent MOSFETs to the BSS138 include NTR4003, 2N7002, FDC666, and BS170.
