STW8N120K5
  • Share:

STMicroelectronics STW8N120K5

Manufacturer No:
STW8N120K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1200V 6A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW8N120K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure enhances the device's performance and efficiency. The STW8N120K5 is particularly suited for applications requiring high voltage and low on-resistance, making it an excellent choice for power management and switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1200 V
RDS(on) (On-Resistance) 1.65 Ω
ID (Drain Current) 6 A
VGS(th) (Threshold Voltage) 2-4 V
Package TO-247 -
Qg (Total Gate Charge) Ultra-low -
Avalanche Tested 100% -
Gate Protection Zener-protected -

Key Features

  • Industry's lowest RDS(on) x area, providing high efficiency and low power losses.
  • Industry's best Figure of Merit (FoM), ensuring optimal performance in various applications.
  • Ultra-low gate charge, reducing switching losses and improving overall system efficiency.
  • 100% avalanche tested, ensuring robustness and reliability under extreme conditions.
  • Zener-protected gate, enhancing the device's durability against voltage spikes and transients.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-voltage switching applications requiring low on-resistance and high reliability.

Q & A

  1. What is the maximum drain-source voltage of the STW8N120K5?

    The maximum drain-source voltage (VDS) of the STW8N120K5 is 1200 V.

  2. What is the typical on-resistance (RDS(on)) of the STW8N120K5?

    The typical on-resistance (RDS(on)) of the STW8N120K5 is 1.65 Ω.

  3. What is the maximum drain current (ID) of the STW8N120K5?

    The maximum drain current (ID) of the STW8N120K5 is 6 A.

  4. What package type is the STW8N120K5 available in?

    The STW8N120K5 is available in a TO-247 package.

  5. Is the STW8N120K5 avalanche tested?

    Yes, the STW8N120K5 is 100% avalanche tested.

  6. What kind of gate protection does the STW8N120K5 have?

    The STW8N120K5 has Zener-protected gates.

  7. What are some typical applications for the STW8N120K5?

    The STW8N120K5 is typically used in power supplies, DC-DC converters, motor control, industrial automation, and renewable energy systems.

  8. What is the significance of the MDmesh™ K5 technology in the STW8N120K5?

    The MDmesh™ K5 technology provides the industry's lowest RDS(on) x area and best Figure of Merit (FoM), enhancing the device's efficiency and performance.

  9. How does the ultra-low gate charge benefit the STW8N120K5?

    The ultra-low gate charge reduces switching losses, improving the overall system efficiency and performance.

  10. Is the STW8N120K5 suitable for high-voltage switching applications?

    Yes, the STW8N120K5 is highly suitable for high-voltage switching applications due to its low on-resistance and high reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:505 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.26
68

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223