STW8N120K5
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STMicroelectronics STW8N120K5

Manufacturer No:
STW8N120K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1200V 6A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW8N120K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure enhances the device's performance and efficiency. The STW8N120K5 is particularly suited for applications requiring high voltage and low on-resistance, making it an excellent choice for power management and switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1200 V
RDS(on) (On-Resistance) 1.65 Ω
ID (Drain Current) 6 A
VGS(th) (Threshold Voltage) 2-4 V
Package TO-247 -
Qg (Total Gate Charge) Ultra-low -
Avalanche Tested 100% -
Gate Protection Zener-protected -

Key Features

  • Industry's lowest RDS(on) x area, providing high efficiency and low power losses.
  • Industry's best Figure of Merit (FoM), ensuring optimal performance in various applications.
  • Ultra-low gate charge, reducing switching losses and improving overall system efficiency.
  • 100% avalanche tested, ensuring robustness and reliability under extreme conditions.
  • Zener-protected gate, enhancing the device's durability against voltage spikes and transients.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-voltage switching applications requiring low on-resistance and high reliability.

Q & A

  1. What is the maximum drain-source voltage of the STW8N120K5?

    The maximum drain-source voltage (VDS) of the STW8N120K5 is 1200 V.

  2. What is the typical on-resistance (RDS(on)) of the STW8N120K5?

    The typical on-resistance (RDS(on)) of the STW8N120K5 is 1.65 Ω.

  3. What is the maximum drain current (ID) of the STW8N120K5?

    The maximum drain current (ID) of the STW8N120K5 is 6 A.

  4. What package type is the STW8N120K5 available in?

    The STW8N120K5 is available in a TO-247 package.

  5. Is the STW8N120K5 avalanche tested?

    Yes, the STW8N120K5 is 100% avalanche tested.

  6. What kind of gate protection does the STW8N120K5 have?

    The STW8N120K5 has Zener-protected gates.

  7. What are some typical applications for the STW8N120K5?

    The STW8N120K5 is typically used in power supplies, DC-DC converters, motor control, industrial automation, and renewable energy systems.

  8. What is the significance of the MDmesh™ K5 technology in the STW8N120K5?

    The MDmesh™ K5 technology provides the industry's lowest RDS(on) x area and best Figure of Merit (FoM), enhancing the device's efficiency and performance.

  9. How does the ultra-low gate charge benefit the STW8N120K5?

    The ultra-low gate charge reduces switching losses, improving the overall system efficiency and performance.

  10. Is the STW8N120K5 suitable for high-voltage switching applications?

    Yes, the STW8N120K5 is highly suitable for high-voltage switching applications due to its low on-resistance and high reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:505 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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