STW56N65DM2
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STMicroelectronics STW56N65DM2

Manufacturer No:
STW56N65DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 48A TO247
Delivery:
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Product Introduction

Overview

The STW56N65DM2 is a high-voltage N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh™ DM2 series, known for its fast recovery diode characteristics. This MOSFET is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-performance applications. The device is packaged in a TO-247 package, which is widely used in power electronics due to its high power handling capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Current Rating (Id)30 A
Power Rating (Pd)360 W
On-Resistance (Rds(on))0.058 Ω (typ.)
PackageTO-247
Recovery Charge (Qrr)Very low
Recovery Time (trr)Very low

Key Features

  • Fast recovery intrinsic diode optimized for Zero Voltage Switching (ZVS) phase-shift bridge topologies.
  • Low recovery charge (Qrr) and recovery time (trr) for improved efficiency.
  • High voltage rating of 650 V and current rating of 30 A.
  • Low on-resistance (Rds(on)) of 0.058 Ω (typ.) for reduced power losses.
  • TO-247 package for high power handling and thermal dissipation.

Applications

The STW56N65DM2 is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • High-frequency switching applications.
  • Automotive and industrial power electronics.

Q & A

  1. What is the voltage rating of the STW56N65DM2 MOSFET?
    The voltage rating of the STW56N65DM2 MOSFET is 650 V.
  2. What is the current rating of the STW56N65DM2 MOSFET?
    The current rating of the STW56N65DM2 MOSFET is 30 A.
  3. What package type is the STW56N65DM2 MOSFET available in?
    The STW56N65DM2 MOSFET is available in a TO-247 package.
  4. What are the key benefits of the MDmesh™ DM2 series?
    The MDmesh™ DM2 series offers very low recovery charge (Qrr) and recovery time (trr), making it ideal for high-efficiency applications.
  5. What are some typical applications for the STW56N65DM2 MOSFET?
    The STW56N65DM2 MOSFET is used in power supplies, DC-DC converters, motor drives, and high-frequency switching applications.
  6. What is the on-resistance (Rds(on)) of the STW56N65DM2 MOSFET?
    The on-resistance (Rds(on)) of the STW56N65DM2 MOSFET is 0.058 Ω (typ.).
  7. Is the STW56N65DM2 MOSFET suitable for automotive applications?
    Yes, the STW56N65DM2 MOSFET is suitable for automotive and industrial power electronics.
  8. What is the power rating of the STW56N65DM2 MOSFET?
    The power rating of the STW56N65DM2 MOSFET is 360 W.
  9. What is the significance of the fast recovery intrinsic diode in the STW56N65DM2 MOSFET?
    The fast recovery intrinsic diode is optimized for Zero Voltage Switching (ZVS) phase-shift bridge topologies, enhancing efficiency and performance.
  10. Where can I find detailed specifications for the STW56N65DM2 MOSFET?
    Detailed specifications can be found in the datasheet available on the STMicroelectronics official website or through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW56N65DM2 STW56N65M2 STW26N65DM2 STW56N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 49A (Tc) 20A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V 62mOhm @ 24.5A, 10V 190mOhm @ 10A, 10V 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 93 nC @ 10 V 35.5 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 100 V 3900 pF @ 100 V 1480 pF @ 100 V 4100 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 360W (Tc) 358W (Tc) 170W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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