Overview
The STW56N60DM2 is a high voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed to meet the demands of high efficiency converters and is particularly suited for bridge topologies and Zero Voltage Switching (ZVS) phase-shift converters. It offers very low recovery charge (Qrr) and time (trr), combined with low on-resistance (RDS(on)), making it ideal for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 0.052 (typ.), 0.060 (max.) | Ω |
| ID (Drain Current, continuous at Tcase = 25 °C) | 50 | A |
| ID (Drain Current, continuous at Tcase = 100 °C) | 31 | A |
| IDM (Drain Current, pulsed) | 200 | A |
| PTOT (Total Dissipation at Tcase = 25 °C) | 360 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tstg (Storage Temperature) | -55 to 150 | °C |
| Tj (Operating Junction Temperature) | - | °C |
| dv/dt (MOSFET dv/dt Ruggedness) | 50 | V/ns |
| Rthj-case (Thermal Resistance Junction-Case) | 0.35 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 50 | °C/W |
Key Features
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on))
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
The STW56N60DM2 is ideal for various high-efficiency converter applications, including:
- Bridge topologies
- Zero Voltage Switching (ZVS) phase-shift converters
- High-efficiency power supplies
- Power conversion in data centers and solar microinverters
Q & A
- What is the maximum drain-source voltage (VDS) of the STW56N60DM2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STW56N60DM2?
The typical on-resistance (RDS(on)) is 0.052 Ω.
- What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 50 A.
- What is the maximum pulsed drain current (IDM) of the STW56N60DM2?
The maximum pulsed drain current (IDM) is 200 A.
- What is the total dissipation (PTOT) at Tcase = 25 °C?
The total dissipation (PTOT) at Tcase = 25 °C is 360 W.
- What is the gate-source voltage (VGS) range?
The gate-source voltage (VGS) range is ±25 V.
- What is the storage temperature range (Tstg) for the STW56N60DM2?
The storage temperature range (Tstg) is -55 to 150 °C.
- What is the thermal resistance junction-case (Rthj-case) of the STW56N60DM2?
The thermal resistance junction-case (Rthj-case) is 0.35 °C/W.
- What are some key applications of the STW56N60DM2?
The STW56N60DM2 is used in bridge topologies, ZVS phase-shift converters, high-efficiency power supplies, and power conversion in data centers and solar microinverters.
- Is the STW56N60DM2 100% avalanche tested?
