Overview
The STW56N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power switching applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its on-resistance and switching characteristics. It is packaged in a TO-247 flange mount package, making it suitable for high-power applications requiring efficient thermal management.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS at TJ max. | 650 V | V |
| RDS(on) max. | 55 mΩ | mΩ |
| ID (continuous) at TC = 25 °C | 52 A | A |
| ID (continuous) at TC = 100 °C | 33 A | A |
| IDM (pulsed) | 208 A | A |
| PTOT (total power dissipation) at TC = 25 °C | 350 W | W |
| Tstg (storage temperature range) | -55 to 150 °C | °C |
| TJ (operating junction temperature) | 150 °C | °C |
| RthJC (thermal resistance, junction-to-case) | 0.36 °C/W | °C/W |
| RthJA (thermal resistance, junction-to-ambient) | 50 °C/W | °C/W |
| VGS(th) (gate threshold voltage) | 2-4 V | V |
| Ciss (input capacitance) | 3750 pF | pF |
| Coss (output capacitance) | 175 pF | pF |
| Qg (total gate charge) | 91 nC | nC |
Key Features
- Extremely low gate charge, enhancing switching efficiency.
- Excellent output capacitance (Coss) profile, reducing switching losses.
- 100% avalanche tested, ensuring robustness against high-energy pulses.
- Zener-protected gate, providing enhanced reliability.
- Low on-resistance (RDS(on)) of 45 mΩ typical, optimized for high-efficiency converters.
- High drain current capability of up to 52 A continuous and 208 A pulsed.
- High operating junction temperature of up to 150 °C.
- Advanced MDmesh M2 technology for improved performance and reliability.
Applications
The STW56N60M2 is suitable for a variety of high-power switching applications, including:
- High-efficiency power converters (e.g., SMPS, DC-DC converters).
- Motor control and drive systems.
- Power supplies and inverters.
- Industrial and automotive power management systems.
- Renewable energy systems (e.g., solar, wind power).
Q & A
- What is the maximum drain-source voltage (VDS) of the STW56N60M2?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STW56N60M2?
The typical on-resistance (RDS(on)) is 45 mΩ.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 52 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 208 A.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 0.36 °C/W.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2-4 V.
- Is the STW56N60M2 100% avalanche tested?
Yes, the STW56N60M2 is 100% avalanche tested.
- What technology is used in the STW56N60M2?
The STW56N60M2 uses the advanced MDmesh M2 technology.
- What is the typical total gate charge (Qg)?
The typical total gate charge (Qg) is 91 nC.
- In what package is the STW56N60M2 available?
The STW56N60M2 is available in a TO-247 flange mount package.
