STW12N150K5
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STMicroelectronics STW12N150K5

Manufacturer No:
STW12N150K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1500V 7A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW12N150K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its proprietary vertical structure, which significantly reduces on-resistance and gate charge, making it ideal for applications that require high power density and efficiency.

The MOSFET is packaged in a TO-247 package and is suitable for various high-power switching applications. It offers superior performance with its low RDS(on) and high figure of merit (FoM), ensuring reliable and efficient operation in demanding environments.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 1500 V
Drain Current (ID) at TC = 25 °C 7 A
Drain Current (ID) at TC = 100 °C 4 A
Pulsed Drain Current (IDM) 28 A
Total Dissipation (PTOT) at TC = 25 °C 250 W
Gate-Source Voltage (VGS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) 1.6 (typ.), 1.9 (max.) Ω
Operating Junction Temperature (Tj) -55 to 150 °C
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Package Type TO-247

Key Features

  • Industry’s lowest RDS(on) * area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected
  • Enhancement mode operation
  • MDmesh™ K5 technology for superior power density and high efficiency

Applications

The STW12N150K5 is designed for various high-power switching applications, including:

  • Switching power supplies
  • Motor control and drives
  • Industrial power conversion systems
  • High-voltage DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STW12N150K5?

    The maximum drain-source voltage (VDS) is 1500 V.

  2. What is the typical on-resistance (RDS(on)) of the STW12N150K5?

    The typical on-resistance (RDS(on)) is 1.6 Ω, with a maximum value of 1.9 Ω.

  3. What is the maximum continuous drain current of the STW12N150K5?

    The maximum continuous drain current (ID) is 7 A at TC = 25 °C and 4 A at TC = 100 °C.

  4. What is the package type of the STW12N150K5?

    The package type is TO-247.

  5. What technology is used in the STW12N150K5?

    The STW12N150K5 uses MDmesh™ K5 technology.

  6. What are the key features of the STW12N150K5?

    The key features include industry’s lowest RDS(on) * area, best figure of merit (FoM), ultra low gate charge, 100% avalanche tested, and Zener-protected.

  7. What is the operating junction temperature range of the STW12N150K5?

    The operating junction temperature range is -55 to 150 °C.

  8. What is the thermal resistance junction-case (Rthj-case) of the STW12N150K5?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W).

  9. Is the STW12N150K5 RoHS compliant?

    Yes, the STW12N150K5 is RoHS compliant with an Ecopack2 grade).

  10. What are the typical applications of the STW12N150K5?

    The typical applications include switching power supplies, motor control and drives, industrial power conversion systems, and high-voltage DC-DC converters).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW12N150K5 STW12N170K5 STW12N120K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1700 V 1200 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 5A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.5A, 10V 2.9Ohm @ 2.5A, 10V 690mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 37 nC @ 10 V 44.2 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 100 V 1380 pF @ 100 V 1370 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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