Overview
The STW12N120K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure that significantly reduces on-resistance and gate charge, making it ideal for applications that require superior power density and high efficiency.
This MOSFET is available in the TO-247 package and is characterized by its high voltage capability, low thermal resistance, and enhanced power density. It is optimized for high-efficiency applications and offers extended product lifespan due to its robust construction.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 1200 | V |
| Drain Current (Id) at TC = 25 °C | 12 | A |
| Drain Current (Id) at TC = 100 °C | 7.6 | A |
| Pulsed Drain Current (Idm) | 48 | A |
| Total Dissipation at TC = 25 °C (Ptot) | 250 | W |
| Gate-Source Voltage (Vgs) | ±30 | V |
| Static Drain-Source On-Resistance (Rds(on)) | 0.69 Ω | Ω |
| Gate Threshold Voltage (Vgs(th)) | 3 - 5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 50 | °C/W |
| Operating Junction Temperature (Tj) | -55 to 150 | °C |
| Package | TO-247 |
Key Features
- Worldwide best FOM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
- Low on-resistance (Rds(on) = 0.69 Ω)
- Fast switching speed
- Low input capacitance
- High power dissipation capacity (250 W)
- High voltage capability (1200 V)
- Enhanced power density
- Optimized for high efficiency applications
- Extended product lifespan
- Lead-free and RoHS compliant
Applications
- Switching applications
- Power supply units
- Motor controls
- Inverters
- Industrial applications
Q & A
- What is the maximum drain-source voltage of the STW12N120K5 MOSFET?
The maximum drain-source voltage (Vds) is 1200 V.
- What is the maximum continuous drain current at 25 °C for the STW12N120K5?
The maximum continuous drain current (Id) at 25 °C is 12 A.
- What is the typical on-resistance (Rds(on)) of the STW12N120K5?
The typical on-resistance (Rds(on)) is 0.69 Ω.
- What is the maximum gate-source voltage (Vgs) for the STW12N120K5?
The maximum gate-source voltage (Vgs) is ±30 V.
- What is the thermal resistance junction-case (Rthj-case) for the STW12N120K5?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.
- Is the STW12N120K5 RoHS compliant?
Yes, the STW12N120K5 is lead-free and RoHS compliant.
- What are the typical applications of the STW12N120K5 MOSFET?
Typical applications include switching applications, power supply units, motor controls, and inverters.
- What is the package type of the STW12N120K5?
The package type is TO-247.
- What is the maximum junction temperature (Tj) for the STW12N120K5?
The maximum junction temperature (Tj) is 150 °C.
- Is the STW12N120K5 100% avalanche tested?
Yes, the STW12N120K5 is 100% avalanche tested.
