Overview
The STP12N120K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a family that includes the STH12N120K5-2, STW12N120K5, and STWA12N120K5, each available in different package types such as TO-220, TO-247, and TO-247 long leads. The STP12N120K5 is characterized by its ultra-low on-resistance and gate charge, making it ideal for applications requiring high power density and efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 1200 | V |
| On-Resistance (RDS(on)) | 0.69 Ω (max) | Ω |
| Drain Current (ID) | 12 A (at TC = 25 °C) | A |
| Total Dissipation (PTOT) | 250 W (at TC = 25 °C) | W |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 °C/W | °C/W |
| Operating Junction Temperature (Tj) | -55 to 150 | °C |
Key Features
- Worldwide best Figure of Merit (FOM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
- Dramatic reduction in on-resistance
- High efficiency and superior power density
Applications
The STP12N120K5 is suitable for various switching applications, including those that require high power handling, low on-resistance, and high efficiency. These applications can include power supplies, motor control, and other high-power electronic systems.
Q & A
- What is the maximum drain-source voltage of the STP12N120K5?
The maximum drain-source voltage (VDS) is 1200 V. - What is the typical on-resistance of the STP12N120K5?
The typical on-resistance (RDS(on)) is 0.69 Ω. - What is the maximum drain current at 25 °C for the STP12N120K5?
The maximum drain current (ID) at 25 °C is 12 A. - What is the total dissipation power at 25 °C for the STP12N120K5?
The total dissipation power (PTOT) at 25 °C is 250 W. - What are the package options available for the STP12N120K5?
The STP12N120K5 is available in TO-220, TO-247, and TO-247 long leads packages. - What is the gate-source voltage range for the STP12N120K5?
The gate-source voltage (VGS) range is ± 30 V. - What is the thermal resistance junction-case for the STP12N120K5?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W. - What is the operating junction temperature range for the STP12N120K5?
The operating junction temperature (Tj) range is -55 to 150 °C. - Is the STP12N120K5 100% avalanche tested?
Yes, the STP12N120K5 is 100% avalanche tested. - What technology is used in the STP12N120K5?
The STP12N120K5 uses the MDmesh™ K5 technology.
