STP13N95K3
  • Share:

STMicroelectronics STP13N95K3

Manufacturer No:
STP13N95K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 10A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP13N95K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced SuperMESH3™ technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. Available in various packages such as TO-220, TO-220FP, and TO-247, it caters to different design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)950V
On-Resistance (RDS(on))0.68 Ω (typ.)
Drain Current (ID)10 AA
Power Dissipation (PTOT)190 WW
Gate Threshold Voltage (VGS(th))5 V @ 100 µAV
Thermal Resistance Junction-Case (Rthj-case)0.66 °C/W (TO-220)°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5 °C/W (TO-220)°C/W
Operating Junction Temperature (Tj)-55 to 150 °C°C
Storage Temperature (Tstg)-55 to 150 °C°C

Key Features

  • Gate charge minimized for efficient switching.
  • Extremely large avalanche performance and 100% avalanche tested.
  • Very low intrinsic capacitance.
  • Zener-protected to enhance ESD capability and safely absorb voltage transients.
  • Low on-resistance and superior dynamic performance.
  • Available in TO-220, TO-220FP, and TO-247 packages.
  • ECOPACK® compliant for environmental sustainability.

Applications

The STP13N95K3 is ideal for various switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • High-frequency switching circuits.
  • Aerospace and automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STP13N95K3?
    The maximum drain-source voltage (VDSS) is 950 V.
  2. What is the typical on-resistance of the STP13N95K3?
    The typical on-resistance (RDS(on)) is 0.68 Ω.
  3. What is the maximum drain current of the STP13N95K3?
    The maximum drain current (ID) is 10 A.
  4. What are the available packages for the STP13N95K3?
    The STP13N95K3 is available in TO-220, TO-220FP, and TO-247 packages.
  5. What is the thermal resistance junction-case for the TO-220 package?
    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.66 °C/W.
  6. Is the STP13N95K3 Zener-protected?
    Yes, the STP13N95K3 is Zener-protected to enhance ESD capability and safely absorb voltage transients.
  7. What is the operating junction temperature range of the STP13N95K3?
    The operating junction temperature range is -55 to 150 °C.
  8. Is the STP13N95K3 ECOPACK® compliant?
    Yes, the STP13N95K3 is ECOPACK® compliant for environmental sustainability.
  9. What are some typical applications of the STP13N95K3?
    The STP13N95K3 is typically used in power supplies, motor control, high-frequency switching circuits, and in aerospace and automotive systems.
  10. What is the significance of SuperMESH3™ technology in the STP13N95K3?
    The SuperMESH3™ technology in the STP13N95K3 provides superior dynamic performance, extremely low on-resistance, and high avalanche capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$7.23
52

Please send RFQ , we will respond immediately.

Same Series
STFI13N95K3
STFI13N95K3
MOSFET N CH 950V 10A I2PAKFP
STW13N95K3
STW13N95K3
MOSFET N-CH 950V 10A TO247-3
STF13N95K3
STF13N95K3
MOSFET N-CH 950V 10A TO220FP

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP