STP13N95K3
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STMicroelectronics STP13N95K3

Manufacturer No:
STP13N95K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 10A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP13N95K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced SuperMESH3™ technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. Available in various packages such as TO-220, TO-220FP, and TO-247, it caters to different design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)950V
On-Resistance (RDS(on))0.68 Ω (typ.)
Drain Current (ID)10 AA
Power Dissipation (PTOT)190 WW
Gate Threshold Voltage (VGS(th))5 V @ 100 µAV
Thermal Resistance Junction-Case (Rthj-case)0.66 °C/W (TO-220)°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5 °C/W (TO-220)°C/W
Operating Junction Temperature (Tj)-55 to 150 °C°C
Storage Temperature (Tstg)-55 to 150 °C°C

Key Features

  • Gate charge minimized for efficient switching.
  • Extremely large avalanche performance and 100% avalanche tested.
  • Very low intrinsic capacitance.
  • Zener-protected to enhance ESD capability and safely absorb voltage transients.
  • Low on-resistance and superior dynamic performance.
  • Available in TO-220, TO-220FP, and TO-247 packages.
  • ECOPACK® compliant for environmental sustainability.

Applications

The STP13N95K3 is ideal for various switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • High-frequency switching circuits.
  • Aerospace and automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STP13N95K3?
    The maximum drain-source voltage (VDSS) is 950 V.
  2. What is the typical on-resistance of the STP13N95K3?
    The typical on-resistance (RDS(on)) is 0.68 Ω.
  3. What is the maximum drain current of the STP13N95K3?
    The maximum drain current (ID) is 10 A.
  4. What are the available packages for the STP13N95K3?
    The STP13N95K3 is available in TO-220, TO-220FP, and TO-247 packages.
  5. What is the thermal resistance junction-case for the TO-220 package?
    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.66 °C/W.
  6. Is the STP13N95K3 Zener-protected?
    Yes, the STP13N95K3 is Zener-protected to enhance ESD capability and safely absorb voltage transients.
  7. What is the operating junction temperature range of the STP13N95K3?
    The operating junction temperature range is -55 to 150 °C.
  8. Is the STP13N95K3 ECOPACK® compliant?
    Yes, the STP13N95K3 is ECOPACK® compliant for environmental sustainability.
  9. What are some typical applications of the STP13N95K3?
    The STP13N95K3 is typically used in power supplies, motor control, high-frequency switching circuits, and in aerospace and automotive systems.
  10. What is the significance of SuperMESH3™ technology in the STP13N95K3?
    The SuperMESH3™ technology in the STP13N95K3 provides superior dynamic performance, extremely low on-resistance, and high avalanche capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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