Overview
The STP105N3LL is an N-channel Power MOSFET developed by STMicroelectronics using the STripFET™ H6 technology, which features a new trench gate structure. This device is designed to offer very low on-resistance (RDS(on)) and is packaged in a TO-220 format. The STP105N3LL is optimized for high-performance switching applications, providing excellent electrical characteristics and robustness.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current at TC = 25°C (silicon limited) | 150 | A |
| Continuous Drain Current at TC = 100°C (silicon limited) | 105 | A |
| Continuous Drain Current at TC = 25°C (package limited) | 80 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Total Dissipation at TC = 25°C (PTOT) | 140 | W |
| Derating Factor | 0.9 | W/°C |
| Single Pulse Avalanche Energy (EAS) | 150 | mJ |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Max. Operating Junction Temperature (Tj) | 175 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10V, ID = 40A | 2.7 - 3.5 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
| Total Gate Charge (Qg) at VDD = 15V, ID = 80A, VGS = 4.5V | 14 - 42 | nC |
Key Features
- Very low on-resistance (RDS(on))
- Very low gate charge (Qg)
- High avalanche ruggedness
- Low gate drive power loss
- Advanced STripFET™ H6 technology with a new trench gate structure
Applications
The STP105N3LL is suitable for various high-performance switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Industrial and automotive electronics
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STP105N3LL?
The maximum drain-source voltage (VDS) is 30 V.
- What is the continuous drain current at TC = 25°C for the STP105N3LL?
The continuous drain current at TC = 25°C (silicon limited) is 150 A, and at TC = 25°C (package limited) is 80 A.
- What is the typical on-resistance (RDS(on)) of the STP105N3LL?
The typical on-resistance (RDS(on)) at VGS = 10V and ID = 40A is 2.7 mΩ.
- What is the maximum operating junction temperature (Tj) for the STP105N3LL?
The maximum operating junction temperature (Tj) is 175 °C.
- What is the single pulse avalanche energy (EAS) of the STP105N3LL?
The single pulse avalanche energy (EAS) is 150 mJ.
- What technology is used in the STP105N3LL?
The STP105N3LL is developed using the STripFET™ H6 technology with a new trench gate structure.
- What are the key features of the STP105N3LL?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- What are some typical applications for the STP105N3LL?
Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits).
- What is the storage temperature range for the STP105N3LL?
The storage temperature range is -55 to 175 °C).
- What is the total gate charge (Qg) of the STP105N3LL?
The total gate charge (Qg) at VDD = 15V, ID = 80A, and VGS = 4.5V is between 14 to 42 nC).
