Overview
The STLD200N4F6AG is an automotive-grade N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) and high current ratings. It is packaged in the PowerFLAT™ 5x6 dual side cooling (DSC) package, designed to enhance heat dissipation and increase power density. This MOSFET is AEC-Q101 qualified, ensuring reliability and performance in harsh automotive environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 120 | A |
| Pulsed Drain Current (IDM) | 480 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 158 | W |
| Operating Junction Temperature Range (TJ) | -55 to 175 | °C |
| Storage Temperature Range (Tstg) | -55 to 150 | °C |
| On-Resistance (RDS(on)) | 1.27 mΩ (typ.) | mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 | V |
| Total Gate Charge (Qg) | 172 nC | nC |
| Thermal Resistance Junction-Case Top Side (Rthj-c top side) | 2.90 °C/W | °C/W |
| Thermal Resistance Junction-Case Bottom Side (Rthj-c bottom side) | 0.95 °C/W | °C/W |
Key Features
- AEC-Q101 Qualified: Ensures reliability and performance in harsh automotive environments.
- Very Low On-Resistance (RDS(on)): 1.27 mΩ (typ.) for high energy efficiency.
- High Current Rating: Continuous drain current of 120 A and pulsed drain current of 480 A.
- Low Gate Charge: Total gate charge of 172 nC for efficient switching at high frequencies.
- High Avalanche Ruggedness: 100% avalanche-rated for robust operation.
- Low Gate Drive Power Loss: Optimized for low power consumption during switching.
- PowerFLAT™ 5x6 DSC Package: Enhances heat dissipation with dual-side cooling, increasing power density.
- Wettable Flank Package: Ensures optimum soldering and 100% Automatic Optical Inspection.
Applications
- Automotive Motor-Control Applications: Suitable for high-performance power switching in automotive systems.
- Reverse-Battery Protection: Used to protect against reverse battery conditions in automotive systems.
- Switching Applications: Ideal for various switching applications requiring high current and low on-resistance.
- Electronic Control Units (ECUs): Enhances power density in ECUs, allowing for smaller designs without compromising functionality or reliability.
Q & A
- What is the maximum drain-source voltage (VDS) of the STLD200N4F6AG?
The maximum drain-source voltage (VDS) is 40 V.
- What is the continuous drain current (ID) rating of the STLD200N4F6AG at 25 °C?
The continuous drain current (ID) rating is 120 A at 25 °C.
- What is the typical on-resistance (RDS(on)) of the STLD200N4F6AG?
The typical on-resistance (RDS(on)) is 1.27 mΩ.
- What is the maximum operating junction temperature (TJ) of the STLD200N4F6AG?
The maximum operating junction temperature (TJ) is 175 °C.
- Is the STLD200N4F6AG AEC-Q101 qualified?
Yes, the STLD200N4F6AG is AEC-Q101 qualified.
- What is the total gate charge (Qg) of the STLD200N4F6AG?
The total gate charge (Qg) is 172 nC.
- What package type is used for the STLD200N4F6AG?
The STLD200N4F6AG is packaged in the PowerFLAT™ 5x6 dual side cooling (DSC) package.
- What are the key applications of the STLD200N4F6AG?
The key applications include automotive motor-control, reverse-battery protection, and high-performance power switching.
- Does the STLD200N4F6AG have wettable flank leads?
Yes, the STLD200N4F6AG has wettable flank leads for optimum soldering and 100% Automatic Optical Inspection.
- What is the thermal resistance junction-case bottom side (Rthj-c bottom side) of the STLD200N4F6AG?
The thermal resistance junction-case bottom side (Rthj-c bottom side) is 0.95 °C/W.
