Overview
The STL57N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency.
It is packaged in the PowerFLAT™ 8x8 HV package, which is environmentally compliant and available in different ECOPACK® grades. The STL57N65M5 is characterized by its high drain-source voltage (VDS) rating of 650 V, low RDS(on) of 0.069 Ω, and high continuous drain current (ID) of 22.5 A at 25 °C.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STL57N65M5 | - |
| Drain-Source Voltage (VDS) | 650 | V |
| Gate-Source Voltage (VGS) | ± 25 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 22.5 | A |
| Pulsed Drain Current (IDM) | 90 | A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.069 | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 0.66 | °C/W |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 45 | °C/W |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Input Capacitance (Ciss) | 4200 | pF |
| Total Gate Charge (Qg) | 96 | nC |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Max. Operating Junction Temperature (Tj) | 150 | °C |
Key Features
- Extremely low RDS(on) of 0.069 Ω, ensuring high efficiency.
- Low gate charge and input capacitance, enhancing switching performance.
- Excellent switching characteristics, suitable for high-frequency applications.
- 100% avalanche tested, ensuring robustness and reliability.
- High continuous drain current of 22.5 A at 25 °C.
- High drain-source voltage rating of 650 V.
- PowerFLAT™ 8x8 HV package, which is environmentally compliant.
Applications
The STL57N65M5 is particularly suited for various switching applications due to its high power handling and superior efficiency. These applications include:
- Power supplies and DC-DC converters.
- Motor control and drives.
- High-frequency switching circuits.
- Industrial and automotive systems requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL57N65M5?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STL57N65M5?
The typical on-resistance (RDS(on)) is 0.069 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 22.5 A.
- What is the gate-source voltage (VGS) range for the STL57N65M5?
The gate-source voltage (VGS) range is ± 25 V.
- What package is the STL57N65M5 available in?
The STL57N65M5 is available in the PowerFLAT™ 8x8 HV package.
- What are the key features of the STL57N65M5?
The key features include extremely low RDS(on), low gate charge, excellent switching performance, and 100% avalanche testing.
- What are the typical applications for the STL57N65M5?
Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, and industrial/automotive systems.
- What is the thermal resistance junction-case (Rthj-case) of the STL57N65M5?
The thermal resistance junction-case (Rthj-case) is 0.66 °C/W.
- What is the maximum operating junction temperature (Tj) for the STL57N65M5?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the storage temperature range for the STL57N65M5?
The storage temperature range is -55 to 150 °C.
