STL24N60M2
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STMicroelectronics STL24N60M2

Manufacturer No:
STL24N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 18A PWRFLAT HV
Delivery:
Payment:
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Product Introduction

Overview

The STL24N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high performance and efficiency in power management applications. It features a strip layout and an improved vertical structure, which enhance its electrical characteristics and reliability. The STL24N60M2 is packaged in a PowerFLAT 8x8 HV package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.186 (typ.) Ω
ID (Drain Current) 18 A
Package PowerFLAT 8x8 HV
Pins 4

Key Features

  • MDmesh™ M2 Technology: Enhances electrical characteristics and reliability through an improved strip layout and vertical structure.
  • Low On-Resistance: With a typical RDS(on) of 0.186 Ω, it minimizes power losses and improves efficiency.
  • High Drain Current: Supports up to 18 A, making it suitable for high-power applications.
  • High Voltage Rating: Rated for 600 V drain-source voltage, ensuring robust performance in high-voltage systems.
  • Compact Packaging: The PowerFLAT 8x8 HV package is designed for space-saving and efficient thermal management.

Applications

  • Switch-Mode Power Supplies (SMPS): Ideal for efficient and compact SMPS designs due to its low on-resistance and high switching performance.
  • Motor Control: Suitable for high-power motor control applications requiring high current and voltage handling capabilities.
  • Power Conversion Systems: Used in various power conversion systems such as DC-DC converters and AC-DC converters.
  • Industrial Power Systems: Applicable in industrial power systems that demand high reliability and efficiency.

Q & A

  1. What is the STL24N60M2?

    The STL24N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using MDmesh™ M2 technology.

  2. What is the drain-source voltage rating of the STL24N60M2?

    The drain-source voltage rating is 600 V.

  3. What is the typical on-resistance of the STL24N60M2?

    The typical on-resistance (RDS(on)) is 0.186 Ω.

  4. What is the maximum drain current of the STL24N60M2?

    The maximum drain current is 18 A.

  5. In what package is the STL24N60M2 available?

    The STL24N60M2 is available in a PowerFLAT 8x8 HV package.

  6. What are some common applications of the STL24N60M2?

    Common applications include switch-mode power supplies, motor control, power conversion systems, and industrial power systems.

  7. What technology is used in the STL24N60M2?

    The STL24N60M2 uses MDmesh™ M2 technology.

  8. Why is the STL24N60M2 suitable for high-power applications?

    It is suitable due to its high drain current, low on-resistance, and high voltage rating.

  9. How does the PowerFLAT 8x8 HV package benefit the STL24N60M2?

    The package is designed for space-saving and efficient thermal management.

  10. Where can I find detailed specifications for the STL24N60M2?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:210mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL24N60M2 STL24N65M2 STL24N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 14A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 9A, 10V 250mOhm @ 7A, 10V 220mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V 1060 pF @ 100 V 1055 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 125W (Tc) 125W (Tc) 125W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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