STL24N60DM2
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STMicroelectronics STL24N60DM2

Manufacturer No:
STL24N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 15A PWRFLAT HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL24N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-efficiency applications. It is packaged in a PowerFLAT 8x8 HV package, which provides a compact and efficient solution for various power management needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 15 A
RDS(on) (On-Resistance) 0.195 Ω
Qrr (Recovery Charge) Very Low -
trr (Recovery Time) Very Low -
Package PowerFLAT 8x8 HV -

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of 0.195 Ω, enhancing efficiency and reducing power losses.
  • Very low recovery charge (Qrr) and recovery time (trr), contributing to high switching performance.
  • Compact PowerFLAT 8x8 HV package, offering a space-efficient solution.
  • Part of the MDmesh™ DM2 series, known for its fast recovery diode characteristics.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial and automotive power management systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STL24N60DM2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STL24N60DM2?

    The typical on-resistance (RDS(on)) is 0.195 Ω.

  3. What package type is used for the STL24N60DM2?

    The STL24N60DM2 is packaged in a PowerFLAT 8x8 HV package.

  4. What are the key benefits of the MDmesh™ DM2 series?

    The MDmesh™ DM2 series offers very low recovery charge (Qrr) and recovery time (trr), making it ideal for high-efficiency and high-frequency applications.

  5. What are some common applications for the STL24N60DM2?

    Common applications include power supplies, motor control systems, high-frequency switching applications, industrial and automotive power management, and renewable energy systems.

  6. How does the STL24N60DM2 contribute to efficiency in power management systems?

    The low on-resistance and fast recovery characteristics of the STL24N60DM2 help in reducing power losses and enhancing overall system efficiency.

  7. Is the STL24N60DM2 suitable for automotive applications?

    While it is not specifically marked as automotive-grade, its high performance and reliability make it a candidate for consideration in automotive power management systems, but it should be verified against specific automotive standards.

  8. What is the maximum drain current of the STL24N60DM2?

    The maximum drain current (ID) is 15 A.

  9. How does the PowerFLAT 8x8 HV package benefit the STL24N60DM2?

    The PowerFLAT 8x8 HV package provides a compact and efficient solution, optimizing space and thermal performance in high-power applications.

  10. Can the STL24N60DM2 be used in renewable energy systems?
  11. Where can I find detailed specifications and datasheets for the STL24N60DM2?

    Detailed specifications and datasheets can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL24N60DM2 STL24N60M2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 9A, 10V 210mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 100 V 1060 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 8-PowerVDFN

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