STL23NS3LLH7
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STMicroelectronics STL23NS3LLH7

Manufacturer No:
STL23NS3LLH7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 92A POWERFLAT
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The STL23NS3LLH7 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device utilizes the advanced STripFET H7 technology, which features a trench gate structure that significantly reduces on-resistance. The MOSFET is packaged in a PowerFLAT 3.3 x 3.3 mm package, making it suitable for applications where space is limited but high power handling is required.

Key Specifications

ParameterValue
Vdss (Drain-Source Voltage)30 V
Id (Continuous Drain Current) at 25°C92 A
Rds(on) (On-Resistance) typical0.0027 Ω
PackagePowerFLAT 3.3 x 3.3 mm
Gate Threshold Voltage (Vth)1.5 V to 3.5 V

Key Features

  • Utilizes STripFET H7 technology with a trench gate structure for extremely low on-resistance.
  • High continuous drain current (Id) of 92 A at 25°C.
  • Low Rds(on) of 0.0027 Ω typical, enhancing efficiency in power applications.
  • Compact PowerFLAT 3.3 x 3.3 mm package for space-saving designs.
  • Monolithic Schottky diode integrated for improved performance.

Applications

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power management in automotive and industrial systems.
  • High-efficiency power switching applications.

Q & A

  1. What is the maximum drain-source voltage (Vdss) of the STL23NS3LLH7? The maximum drain-source voltage (Vdss) is 30 V.
  2. What is the typical on-resistance (Rds(on)) of the STL23NS3LLH7? The typical on-resistance (Rds(on)) is 0.0027 Ω.
  3. What is the continuous drain current (Id) at 25°C for the STL23NS3LLH7? The continuous drain current (Id) at 25°C is 92 A.
  4. What package type is used for the STL23NS3LLH7? The STL23NS3LLH7 is packaged in a PowerFLAT 3.3 x 3.3 mm package.
  5. Does the STL23NS3LLH7 include an integrated Schottky diode? Yes, the STL23NS3LLH7 includes a monolithic Schottky diode.
  6. What technology does the STL23NS3LLH7 use? The STL23NS3LLH7 uses STripFET H7 technology with a trench gate structure.
  7. What are some common applications for the STL23NS3LLH7? Common applications include DC-DC converters, motor control systems, automotive and industrial power management, and high-efficiency power switching.
  8. What is the gate threshold voltage range for the STL23NS3LLH7? The gate threshold voltage range is from 1.5 V to 3.5 V.
  9. Why is the STL23NS3LLH7 suitable for space-constrained designs? The STL23NS3LLH7 is suitable for space-constrained designs due to its compact PowerFLAT 3.3 x 3.3 mm package.
  10. What are the benefits of using the STripFET H7 technology in the STL23NS3LLH7? The STripFET H7 technology provides extremely low on-resistance, enhancing efficiency and performance in power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:92A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.9W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
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