STH245N75F3-6
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STMicroelectronics STH245N75F3-6

Manufacturer No:
STH245N75F3-6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 180A H2PAK-6
Delivery:
Payment:
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Product Introduction

Overview

The STH245N75F3-6 is a high-performance N-Channel MOSFET produced by STMicroelectronics. This device is part of ST's advanced MOSFET family, known for its high efficiency and reliability. Although the STH245N75F3-6 is currently obsolete and no longer manufactured, it remains a significant component in various legacy systems and applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)75 V
ID (Continuous Drain Current)180 A
RDS(on) (On-State Resistance)2.5 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage)2.5 V to 4 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageH2PAK-6

Key Features

  • High Current Capability: The STH245N75F3-6 can handle high continuous drain currents up to 180 A, making it suitable for high-power applications.
  • Low On-State Resistance: With a typical on-state resistance of 2.5 mΩ at VGS = 10 V, this MOSFET minimizes power losses and enhances efficiency.
  • Advanced Technology: Utilizes ST's advanced MOSFET technology, ensuring high reliability and performance.
  • Package Type: H2PAK-6 package, which is designed for high-power applications and provides good thermal dissipation.

Applications

The STH245N75F3-6 is ideal for various high-power applications, including:

  • Power Supplies: High-efficiency power supplies, especially those requiring high current handling.
  • Motor Control: Motor drives and control systems where high current and low on-state resistance are crucial.
  • Industrial Automation: Industrial automation systems that demand reliable and efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the STH245N75F3-6?
    The maximum drain-source voltage (VDS) is 75 V.
  2. What is the continuous drain current rating of the STH245N75F3-6?
    The continuous drain current (ID) is up to 180 A.
  3. What is the typical on-state resistance of the STH245N75F3-6?
    The typical on-state resistance (RDS(on)) is 2.5 mΩ at VGS = 10 V.
  4. What package type is used for the STH245N75F3-6?
    The package type is H2PAK-6.
  5. Is the STH245N75F3-6 still in production?
    No, the STH245N75F3-6 is obsolete and no longer manufactured.
  6. What are some common applications for the STH245N75F3-6?
    Common applications include high-efficiency power supplies, motor control, and industrial automation.
  7. What is the threshold voltage range for the STH245N75F3-6?
    The threshold voltage (VGS(th)) range is from 2.5 V to 4 V.
  8. Why is the STH245N75F3-6 considered high-performance?
    It is considered high-performance due to its advanced MOSFET technology, high current capability, and low on-state resistance.
  9. Where can I find substitutes for the STH245N75F3-6?
    You can find substitutes or parametric equivalents through distributors like Digi-Key or other electronic component suppliers.
  10. What are the benefits of using the H2PAK-6 package?
    The H2PAK-6 package provides good thermal dissipation and is designed for high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-6
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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Similar Products

Part Number STH245N75F3-6 STH240N75F3-6
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 90A, 10V 3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V 6800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2PAK-6 H2PAK-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

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