STH240N75F3-6
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STMicroelectronics STH240N75F3-6

Manufacturer No:
STH240N75F3-6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 180A H2PAK-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH240N75F3-6 is an N-channel enhancement mode Power MOSFET produced by STMicroelectronics. This device is fabricated using STMicroelectronics' advanced STripFET™ III technology, which is designed to minimize conduction losses and enhance overall performance. The STH240N75F3-6 is characterized by its high current handling capability and low on-resistance, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)75 V
RDS(on) (On-Resistance)2.6 mΩ (typical)
ID (Drain Current)180 A
Ptot (Total Power Dissipation)Dependent on package and thermal conditions
TJ (Junction Temperature)-55°C to 150°C
PackageTO-247-4 or TO-263-7L

Key Features

  • Low on-resistance (RDS(on)) of 2.6 mΩ (typical) to reduce conduction losses.
  • High current handling capability of up to 180 A.
  • Enhancement mode N-channel MOSFET for efficient switching and control.
  • STripFET™ III technology for improved performance and reliability.
  • Wide operating junction temperature range from -55°C to 150°C.

Applications

The STH240N75F3-6 is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial power systems.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems such as solar and wind power inverters.

Q & A

  1. What is the typical on-resistance of the STH240N75F3-6?
    The typical on-resistance (RDS(on)) is 2.6 mΩ.
  2. What is the maximum drain current of the STH240N75F3-6?
    The maximum drain current (ID) is 180 A.
  3. What technology is used in the fabrication of the STH240N75F3-6?
    The STH240N75F3-6 is fabricated using STMicroelectronics' STripFET™ III technology.
  4. What are the typical operating temperatures for the STH240N75F3-6?
    The junction temperature range is from -55°C to 150°C.
  5. In what packages is the STH240N75F3-6 available?
    The STH240N75F3-6 is available in TO-247-4 and TO-263-7L packages.
  6. What are some common applications for the STH240N75F3-6?
    Common applications include power supplies, motor control, industrial power systems, automotive systems, and renewable energy systems.
  7. What is the maximum drain-source voltage (VDS) for the STH240N75F3-6?
    The maximum drain-source voltage (VDS) is 75 V.
  8. How does the STripFET™ III technology benefit the performance of the STH240N75F3-6?
    The STripFET™ III technology reduces conduction losses and enhances overall performance by improving the device's electrical characteristics.
  9. Where can I find detailed specifications and datasheets for the STH240N75F3-6?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website and other electronic component supplier websites such as Digi-Key, Mouser, etc..
  10. What is the significance of the low on-resistance in the STH240N75F3-6?
    The low on-resistance reduces conduction losses, leading to higher efficiency and better thermal management in high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-6
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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In Stock

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Same Series
STH240N75F3-2
STH240N75F3-2
MOSFET N CH 75V 180A H2PAK-2

Similar Products

Part Number STH240N75F3-6 STH245N75F3-6 STH240N75F3-2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 90A, 10V 3mOhm @ 90A, 10V 3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V 87 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V 6800 pF @ 25 V 6800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package H2PAK-6 H2PAK-6 H2Pak-2
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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