Overview
The STFW69N65M5 is a high-performance N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is designed using an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making it especially suitable for applications requiring superior power density and outstanding efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 650 | V |
| Continuous Drain Current (ID) at TC = 25°C | 58 | A |
| Continuous Drain Current (ID) at TC = 100°C | 36.5 | A |
| Pulsed Drain Current (IDM) | 232 | A |
| Gate-Source Voltage (VGS) | ±25 | V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 29 A | 0.037 (typ.), 0.045 (max.) | Ω |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 1.58 (TO-3PF), 0.38 (TO-247) | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 50 | °C/W |
Key Features
- Worldwide best RDS(on) * area, ensuring low on-resistance.
- Higher VDSS rating and high dv/dt capability for robust performance.
- Excellent switching performance, making it suitable for high-frequency applications.
- 100% avalanche tested, ensuring reliability under extreme conditions.
- Available in TO-3PF and TO-247 packages, offering flexibility in design.
Applications
The STFW69N65M5 is particularly suited for switching applications where high power density and efficiency are critical. These include:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power systems.
Q & A
- What is the maximum drain-source breakdown voltage of the STFW69N65M5?
The maximum drain-source breakdown voltage (VBRDSS) is 650 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 58 A at TC = 25°C and 36.5 A at TC = 100°C.
- What is the typical on-resistance of the STFW69N65M5?
The typical static drain-source on-resistance (RDS(on)) is 0.037 Ω at VGS = 10 V and ID = 29 A.
- What are the available package types for the STFW69N65M5?
The device is available in TO-3PF and TO-247 packages.
- What is the maximum junction temperature for the STFW69N65M5?
The maximum junction temperature (Tj) is 150°C.
- What is the thermal resistance junction-case for the TO-3PF and TO-247 packages?
The thermal resistance junction-case (Rthj-case) is 1.58°C/W for TO-3PF and 0.38°C/W for TO-247.
- Is the STFW69N65M5 100% avalanche tested?
- What are some typical applications for the STFW69N65M5?
Typical applications include power supplies, DC-DC converters, motor control and drive systems, high-frequency switching circuits, and industrial and automotive power systems.
- What is the gate-source voltage range for the STFW69N65M5?
The gate-source voltage (VGS) range is ±25 V.
- What is the peak diode recovery voltage slope (dv/dt) for the STFW69N65M5?
The peak diode recovery voltage slope (dv/dt) is 15 V/ns.
