STF16N50M2
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STMicroelectronics STF16N50M2

Manufacturer No:
STF16N50M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 13A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STF16N50M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and reduces on-resistance. It is packaged in a TO-220FP package, making it suitable for a wide range of high-power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 500 V
RDS(on) (On-Resistance) 240 mΩ (typ.)
ID (Drain Current, continuous at TC = 25 °C) 13 A A
ID (Drain Current, continuous at TC = 100 °C) 8 A A
IDM (Drain Current, pulsed) 52 A A
PTOT (Total Power Dissipation at TC = 25 °C) 25 W W
VGS (Gate-Source Voltage) ±25 V V
TJ (Operating Junction Temperature Range) -55 to 150 °C °C
RthJC (Thermal Resistance, Junction-to-Case) 5 °C/W °C/W
RthJA (Thermal Resistance, Junction-to-Ambient) 62.5 °C/W °C/W

Key Features

  • Extremely low gate charge, enhancing switching efficiency.
  • Excellent output capacitance (Coss) profile, reducing switching losses.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Zener-protected gate, providing additional protection against voltage spikes.
  • Low on-resistance (RDS(on)) of 240 mΩ (typ.), optimizing power handling.
  • High drain current capability of up to 13 A (continuous) and 52 A (pulsed).
  • Wide operating junction temperature range from -55 to 150 °C.

Applications

The STF16N50M2 is suitable for various high-efficiency power conversion applications, including:

  • Switching power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Power factor correction (PFC) circuits.
  • High-power audio amplifiers.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF16N50M2?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance (RDS(on)) of the STF16N50M2?

    The typical on-resistance (RDS(on)) is 240 mΩ.

  3. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 13 A.

  4. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 52 A.

  5. What is the thermal resistance from junction to case (RthJC)?

    The thermal resistance from junction to case (RthJC) is 5 °C/W.

  6. What is the thermal resistance from junction to ambient (RthJA)?

    The thermal resistance from junction to ambient (RthJA) is 62.5 °C/W.

  7. What are the key features of the STF16N50M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche testing, and Zener-protected gate.

  8. In what package is the STF16N50M2 available?

    The STF16N50M2 is available in a TO-220FP package.

  9. What are some typical applications of the STF16N50M2?

    Typical applications include switching power supplies, motor control, power factor correction circuits, high-power audio amplifiers, and industrial and automotive power management systems.

  10. What is the operating junction temperature range of the STF16N50M2?

    The operating junction temperature range is from -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Full Pack
Package / Case:TO-220-3 Full Pack
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Same Series
STD16N50M2
STD16N50M2
MOSFET N-CH 500V 13A TO252
STP16N50M2
STP16N50M2
MOSFET N-CH 500V 13A TO220

Similar Products

Part Number STF16N50M2 STF16N60M2 STF11N50M2 STF12N50M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 12A (Tc) 8A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 320mOhm @ 6A, 10V 530mOhm @ 4A, 10V 380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V 19 nC @ 10 V 12 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V 700 pF @ 100 V 395 pF @ 100 V 560 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 Full Pack TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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