Overview
The STF16N50M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and reduces on-resistance. It is packaged in a TO-220FP package, making it suitable for a wide range of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 500 | V |
| RDS(on) (On-Resistance) | 240 mΩ (typ.) | mΩ |
| ID (Drain Current, continuous at TC = 25 °C) | 13 A | A |
| ID (Drain Current, continuous at TC = 100 °C) | 8 A | A |
| IDM (Drain Current, pulsed) | 52 A | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 25 W | W |
| VGS (Gate-Source Voltage) | ±25 V | V |
| TJ (Operating Junction Temperature Range) | -55 to 150 °C | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 5 °C/W | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 62.5 °C/W | °C/W |
Key Features
- Extremely low gate charge, enhancing switching efficiency.
- Excellent output capacitance (Coss) profile, reducing switching losses.
- 100% avalanche tested, ensuring robustness against transient conditions.
- Zener-protected gate, providing additional protection against voltage spikes.
- Low on-resistance (RDS(on)) of 240 mΩ (typ.), optimizing power handling.
- High drain current capability of up to 13 A (continuous) and 52 A (pulsed).
- Wide operating junction temperature range from -55 to 150 °C.
Applications
The STF16N50M2 is suitable for various high-efficiency power conversion applications, including:
- Switching power supplies and DC-DC converters.
- Motor control and drive systems.
- Power factor correction (PFC) circuits.
- High-power audio amplifiers.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF16N50M2?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance (RDS(on)) of the STF16N50M2?
The typical on-resistance (RDS(on)) is 240 mΩ.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 13 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 52 A.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 5 °C/W.
- What is the thermal resistance from junction to ambient (RthJA)?
The thermal resistance from junction to ambient (RthJA) is 62.5 °C/W.
- What are the key features of the STF16N50M2?
The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche testing, and Zener-protected gate.
- In what package is the STF16N50M2 available?
The STF16N50M2 is available in a TO-220FP package.
- What are some typical applications of the STF16N50M2?
Typical applications include switching power supplies, motor control, power factor correction circuits, high-power audio amplifiers, and industrial and automotive power management systems.
- What is the operating junction temperature range of the STF16N50M2?
The operating junction temperature range is from -55 to 150 °C.
