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STD7N60DM2
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STMicroelectronics STD7N60DM2

Manufacturer No:
STD7N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed to offer superior performance in high-power applications, featuring very low recovery charge (Qrr) and time (trr), which are crucial for efficient operation.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.78 Ohm (typ.)
ID (Drain Current) 6 A
Ptot (Total Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -55°C to 150°C
Package DPAK

Key Features

  • Extremely low gate charge and input capacitance
  • Low on-resistance (RDS(on)) of 0.78 Ohm (typ.)
  • Fast-recovery body diode with very low recovery charge (Qrr) and time (trr)
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected gate

Applications

The STD7N60DM2 is suitable for a variety of high-power applications, including:

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control and drives
  • Power factor correction (PFC)
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage of the STD7N60DM2?

    600 V

  2. What is the typical on-resistance of the STD7N60DM2?

    0.78 Ohm

  3. What is the maximum drain current of the STD7N60DM2?

    6 A

  4. What package type is the STD7N60DM2 available in?

    DPAK

  5. What are the key features of the STD7N60DM2?

    Extremely low gate charge, low on-resistance, fast-recovery body diode, 100% avalanche tested, high dv/dt ruggedness, and Zener-protected gate.

  6. What applications is the STD7N60DM2 suitable for?

    Switch-mode power supplies, DC-DC converters, motor control and drives, power factor correction, and high-frequency switching applications.

  7. What is the junction temperature range of the STD7N60DM2?

    -55°C to 150°C

  8. Does the STD7N60DM2 have a built-in protection mechanism?

    Yes, it has a Zener-protected gate.

  9. What is the significance of the MDmesh™ DM2 technology in the STD7N60DM2?

    The MDmesh™ DM2 technology provides very low recovery charge (Qrr) and time (trr), enhancing the efficiency and performance of the MOSFET.

  10. Where can I find detailed specifications and datasheets for the STD7N60DM2?

    You can find detailed specifications and datasheets on the STMicroelectronics official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$0.77
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Similar Products

Part Number STD7N60DM2 STD7N60M2 STD8N60DM2 STD5N60DM2 STD6N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 5A (Tc) 8A (Tc) 3.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V 950mOhm @ 2.5A, 10V 600mOhm @ 4A, 10V 1.55Ohm @ 1.75A, 10V 1.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4V @ 250µA 5V @ 100µA 5V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 8.8 nC @ 10 V 13.5 nC @ 10 V 8.6 nC @ 10 V 6.2 nC @ 10 V
Vgs (Max) ±25V ±25V ±30V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 324 pF @ 100 V 271 pF @ 100 V 375 pF @ 100 V 375 pF @ 100 V 274 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 85W (Tc) 45W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252) DPAK DPAK DPAK D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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