STD7N60DM2
  • Share:

STMicroelectronics STD7N60DM2

Manufacturer No:
STD7N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed to offer superior performance in high-power applications, featuring very low recovery charge (Qrr) and time (trr), which are crucial for efficient operation.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.78 Ohm (typ.)
ID (Drain Current) 6 A
Ptot (Total Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -55°C to 150°C
Package DPAK

Key Features

  • Extremely low gate charge and input capacitance
  • Low on-resistance (RDS(on)) of 0.78 Ohm (typ.)
  • Fast-recovery body diode with very low recovery charge (Qrr) and time (trr)
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected gate

Applications

The STD7N60DM2 is suitable for a variety of high-power applications, including:

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control and drives
  • Power factor correction (PFC)
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage of the STD7N60DM2?

    600 V

  2. What is the typical on-resistance of the STD7N60DM2?

    0.78 Ohm

  3. What is the maximum drain current of the STD7N60DM2?

    6 A

  4. What package type is the STD7N60DM2 available in?

    DPAK

  5. What are the key features of the STD7N60DM2?

    Extremely low gate charge, low on-resistance, fast-recovery body diode, 100% avalanche tested, high dv/dt ruggedness, and Zener-protected gate.

  6. What applications is the STD7N60DM2 suitable for?

    Switch-mode power supplies, DC-DC converters, motor control and drives, power factor correction, and high-frequency switching applications.

  7. What is the junction temperature range of the STD7N60DM2?

    -55°C to 150°C

  8. Does the STD7N60DM2 have a built-in protection mechanism?

    Yes, it has a Zener-protected gate.

  9. What is the significance of the MDmesh™ DM2 technology in the STD7N60DM2?

    The MDmesh™ DM2 technology provides very low recovery charge (Qrr) and time (trr), enhancing the efficiency and performance of the MOSFET.

  10. Where can I find detailed specifications and datasheets for the STD7N60DM2?

    You can find detailed specifications and datasheets on the STMicroelectronics official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.77
184

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number STD7N60DM2 STD7N60M2 STD8N60DM2 STD5N60DM2 STD6N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 5A (Tc) 8A (Tc) 3.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V 950mOhm @ 2.5A, 10V 600mOhm @ 4A, 10V 1.55Ohm @ 1.75A, 10V 1.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4V @ 250µA 5V @ 100µA 5V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 8.8 nC @ 10 V 13.5 nC @ 10 V 8.6 nC @ 10 V 6.2 nC @ 10 V
Vgs (Max) ±25V ±25V ±30V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 324 pF @ 100 V 271 pF @ 100 V 375 pF @ 100 V 375 pF @ 100 V 274 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 85W (Tc) 45W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252) DPAK DPAK DPAK D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24