STD8N60DM2
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STMicroelectronics STD8N60DM2

Manufacturer No:
STD8N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 8A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD8N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh DM2 fast-recovery diode series. This device is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-efficiency applications. It is packaged in a DPAK (TO-252) package, which is a surface-mount type, enhancing its suitability for modern PCB designs.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 8 A
Rds(on) - On-State Resistance 550 mΩ (typ.) at Vgs = 10 V, Id = 4 A
Pd - Total Dissipation at Tc 85 W
Package Type DPAK (TO-252)

Key Features

  • High-voltage operation with a drain-source breakdown voltage of 600 V.
  • Low on-state resistance (Rds(on)) of 550 mΩ (typ.) at Vgs = 10 V, Id = 4 A.
  • Low recovery charge (Qrr) and time (trr), enhancing efficiency in switching applications.
  • Continuous drain current of 8 A.
  • Total dissipation at Tc of 85 W.
  • DPAK (TO-252) surface-mount package for ease of integration into modern PCB designs.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the drain-source breakdown voltage of the STD8N60DM2?

    The drain-source breakdown voltage is 600 V.

  2. What is the continuous drain current of the STD8N60DM2?

    The continuous drain current is 8 A.

  3. What is the typical on-state resistance of the STD8N60DM2?

    The typical on-state resistance (Rds(on)) is 550 mΩ at Vgs = 10 V, Id = 4 A.

  4. What package type is the STD8N60DM2 available in?

    The STD8N60DM2 is available in a DPAK (TO-252) surface-mount package.

  5. What are the key benefits of the MDmesh DM2 series?

    The MDmesh DM2 series offers very low recovery charge (Qrr) and time (trr), enhancing efficiency in switching applications.

  6. What are some typical applications for the STD8N60DM2?

    Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching applications.

  7. What is the total dissipation at Tc for the STD8N60DM2?

    The total dissipation at Tc is 85 W.

  8. Is the STD8N60DM2 suitable for automotive applications?

    While the STD8N60DM2 itself is not specifically marked as automotive-grade, STMicroelectronics offers other variants in the MDmesh DM2 series that are automotive-grade.

  9. What are the advantages of using a DPAK package?

    The DPAK package is a surface-mount type, which enhances its suitability for modern PCB designs by reducing space and improving thermal performance.

  10. Where can I find detailed specifications and datasheets for the STD8N60DM2?

    Detailed specifications and datasheets can be found on the STMicroelectronics official website, as well as through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:375 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD8N60DM2 STD5N60DM2 STD6N60DM2 STD7N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 3.5A (Tc) 5A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4A, 10V 1.55Ohm @ 1.75A, 10V 1.1Ohm @ 2.5A, 10V 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 250µA 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 8.6 nC @ 10 V 6.2 nC @ 10 V 7.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 375 pF @ 100 V 375 pF @ 100 V 274 pF @ 100 V 324 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 85W (Tc) 45W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK D-PAK (TO-252) D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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