Overview
The STD5NM60-1 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their revolutionary MDmesh technology. This technology combines the multiple drain process with STMicroelectronics' PowerMESH horizontal layout, resulting in a device with extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STD5NM60-1 is packaged in an IPAK package and is designed to offer superior dynamic performance compared to similar products on the market.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type of Transistor | MOSFET | |
| Type of Control Channel | N-Channel | |
| Maximum Drain-Source Voltage (Vds) | 600 | V |
| Maximum Gate-Source Voltage (Vgs) | 30 | V |
| Maximum Drain Current (Id) | 5 | A |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 1 | Ω |
| Total Gate Charge (Qg) | 13 | nC |
| Rise Time (tr) | 10 | ns |
| Output Capacitance (Coss) | 100 | pF |
| Maximum Power Dissipation (Pd) | 96 | W |
| Package | IPAK |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High dv/dt and excellent avalanche capabilities
- Superior dynamic performance due to STMicroelectronics' proprietary strip technique
Applications
The STD5NM60-1 is primarily used in switching applications, where its low on-resistance, high dv/dt, and excellent avalanche characteristics are particularly beneficial.
Q & A
- What is the maximum drain-source voltage of the STD5NM60-1?
The maximum drain-source voltage (Vds) is 600 V.
- What is the maximum gate-source voltage of the STD5NM60-1?
The maximum gate-source voltage (Vgs) is 30 V.
- What is the maximum drain current of the STD5NM60-1?
The maximum drain current (Id) is 5 A.
- What is the maximum junction temperature of the STD5NM60-1?
The maximum junction temperature (Tj) is 150 °C.
- What is the typical on-state resistance of the STD5NM60-1?
The typical on-state resistance (Rds(on)) is 1 Ω.
- What is the total gate charge of the STD5NM60-1?
The total gate charge (Qg) is 13 nC.
- What is the rise time of the STD5NM60-1?
The rise time (tr) is 10 ns.
- What is the output capacitance of the STD5NM60-1?
The output capacitance (Coss) is 100 pF.
- What is the maximum power dissipation of the STD5NM60-1?
The maximum power dissipation (Pd) is 96 W.
- In what package is the STD5NM60-1 available?
The STD5NM60-1 is available in an IPAK package.
