Overview
The STD45P4LLF6AG is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET F6 technology. This device is specifically designed for automotive applications and is AEC-Q101 qualified, ensuring high reliability and performance in demanding environments. The MOSFET features a new trench gate structure, resulting in very low on-resistance (RDS(on)) and low gate charge, making it ideal for high-efficiency switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | -40 | V |
| Drain Current (ID) | -50 A (continuous at Tcase = 25 °C) | A |
| Drain Current (IDM) | -200 A (pulsed) | A |
| Gate-Source Voltage (VGS) | ±18 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 12 - 15 mΩ | mΩ |
| Gate Threshold Voltage (VGS(th)) | -2.5 to -1 V | V |
| Total Dissipation at Tcase = 25 °C (PTOT) | 58 W | W |
| Thermal Resistance Junction-Case (Rthj-case) | 2.14 °C/W | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 50 °C/W | °C/W |
| Storage Temperature (Tstg) | -55 to 150 °C | °C |
| Operating Junction Temperature (Tj) | -55 to 175 °C | °C |
Key Features
- Designed for automotive applications and AEC-Q101 qualified.
- Very low on-resistance (RDS(on)) of 12 to 15 mΩ.
- Very low gate charge.
- High avalanche ruggedness.
- Low gate drive power loss.
- New trench gate structure using STripFET F6 technology.
Applications
The STD45P4LLF6AG is primarily used in switching applications within the automotive sector. Its high performance, low on-resistance, and robust design make it suitable for a variety of automotive systems that require reliable and efficient power management.
Q & A
- What is the STD45P4LLF6AG? The STD45P4LLF6AG is a P-channel Power MOSFET designed for automotive applications, developed by STMicroelectronics using the STripFET F6 technology.
- What are the key features of the STD45P4LLF6AG? It features very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- What is the maximum drain-source voltage (VDS) of the STD45P4LLF6AG? The maximum drain-source voltage (VDS) is -40 V.
- What is the maximum continuous drain current (ID) at Tcase = 25 °C? The maximum continuous drain current (ID) at Tcase = 25 °C is -50 A.
- What is the gate-source voltage (VGS) range? The gate-source voltage (VGS) range is ±18 V.
- What is the typical static drain-source on-resistance (RDS(on))? The typical static drain-source on-resistance (RDS(on)) is 12 to 15 mΩ.
- Is the STD45P4LLF6AG AEC-Q101 qualified? Yes, the STD45P4LLF6AG is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the thermal resistance junction-case (Rthj-case) of the STD45P4LLF6AG? The thermal resistance junction-case (Rthj-case) is 2.14 °C/W.
- What are the primary applications of the STD45P4LLF6AG? The primary applications are in switching within the automotive sector.
- What package type is the STD45P4LLF6AG available in? The STD45P4LLF6AG is available in a DPAK (TO-252) package.
