STD45P4LLF6AG
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STMicroelectronics STD45P4LLF6AG

Manufacturer No:
STD45P4LLF6AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 50A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STD45P4LLF6AG is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET F6 technology. This device is specifically designed for automotive applications and is AEC-Q101 qualified, ensuring high reliability and performance in demanding environments. The MOSFET features a new trench gate structure, resulting in very low on-resistance (RDS(on)) and low gate charge, making it ideal for high-efficiency switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)-40V
Drain Current (ID)-50 A (continuous at Tcase = 25 °C)A
Drain Current (IDM)-200 A (pulsed)A
Gate-Source Voltage (VGS)±18V
Static Drain-Source On-Resistance (RDS(on))12 - 15 mΩ
Gate Threshold Voltage (VGS(th))-2.5 to -1 VV
Total Dissipation at Tcase = 25 °C (PTOT)58 WW
Thermal Resistance Junction-Case (Rthj-case)2.14 °C/W°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)50 °C/W°C/W
Storage Temperature (Tstg)-55 to 150 °C°C
Operating Junction Temperature (Tj)-55 to 175 °C°C

Key Features

  • Designed for automotive applications and AEC-Q101 qualified.
  • Very low on-resistance (RDS(on)) of 12 to 15 mΩ.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • New trench gate structure using STripFET F6 technology.

Applications

The STD45P4LLF6AG is primarily used in switching applications within the automotive sector. Its high performance, low on-resistance, and robust design make it suitable for a variety of automotive systems that require reliable and efficient power management.

Q & A

  1. What is the STD45P4LLF6AG? The STD45P4LLF6AG is a P-channel Power MOSFET designed for automotive applications, developed by STMicroelectronics using the STripFET F6 technology.
  2. What are the key features of the STD45P4LLF6AG? It features very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
  3. What is the maximum drain-source voltage (VDS) of the STD45P4LLF6AG? The maximum drain-source voltage (VDS) is -40 V.
  4. What is the maximum continuous drain current (ID) at Tcase = 25 °C? The maximum continuous drain current (ID) at Tcase = 25 °C is -50 A.
  5. What is the gate-source voltage (VGS) range? The gate-source voltage (VGS) range is ±18 V.
  6. What is the typical static drain-source on-resistance (RDS(on))? The typical static drain-source on-resistance (RDS(on)) is 12 to 15 mΩ.
  7. Is the STD45P4LLF6AG AEC-Q101 qualified? Yes, the STD45P4LLF6AG is AEC-Q101 qualified, making it suitable for automotive applications.
  8. What is the thermal resistance junction-case (Rthj-case) of the STD45P4LLF6AG? The thermal resistance junction-case (Rthj-case) is 2.14 °C/W.
  9. What are the primary applications of the STD45P4LLF6AG? The primary applications are in switching within the automotive sector.
  10. What package type is the STD45P4LLF6AG available in? The STD45P4LLF6AG is available in a DPAK (TO-252) package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65.5 nC @ 10 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:3525 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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